A survey of new electron-optical materials characterisation techniques
It is rare that the detection of a new signal from a solid-state system does not in time prove useful for materials characterisation. At the same time, the increasing number of detectors fitted to modem electron microscopes, their improved probe-forming capabilities and vacuum performance and the trend toward full digital control and data aquisition, together with the use of more self-explanatory human interfaces in software has greatly increased the number of useful signals and their combinations, making the modem electron microscope an extraordinarily powerful and versatile instrument for materials characterisation. We list below some of the more promising new ways in which the signals available from modem TEM/STEM and SEM instruments may be used in materials science.1. Backscattered channelling imaging. By detecting elastically back-scattered electrons using an energy filter, striking diffraction contrast images of line and planar defects may be obtained from bulk samples. A field-emission SEM instrument is required for this work, operating at about 50 kV.The spatial resolution achieved is about 10 nm, the images come from a depth of less than about 100 nm, and atomically clean surfaces are not required.