Combining transmission electron microscopy with focused ion beam sputtering for microstructural investigations of AlGaAs/GaAs heterojunction bipolar transistors

New and interesting physical phenomena are being observed via thin film depositions using a variety of processing techniques in different material systems. The present study describes Pb-Zr-Ti-O pyrochlore thin films which were deposited onto (100) MgO substrates using an ion beam sputtering technique. These films are of interest because of their unique microstructure which may provide valuable information in better understanding the epitaxial growth of thin films. Characterization were performed using conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Special TEM sample preparation procedures have been developed, which will be reported elsewhere.The as-deposited pyrochlore thin film is near epitaxial and is oriented with both (100) and (111) parallel to the (100) of the MgO substrate. Figure 1(a) shows the selected area diffraction pattern (SADP) of the pyrochlore thin film taken parallel to the [100] zone axis of the substrate.

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Size Effect in Nix(MgO)100-X Nanocomposites

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.168-169.361 ◽

2010 ◽

Vol 168-169 ◽

pp. 361-364 ◽

Cited By ~ 1

Author(s):

A.A. Grebennikov ◽

O.V. Stognei

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Curie Temperature ◽

Size Effect ◽

Room Temperature ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Nanostructured Composite ◽

Transmission Electron ◽

Beam Sputtering

The possibility of obtaining a nanostructured composite in the Ni-Mg-O system by ion-beam sputtering has been investigated. The structural, magnetic and magnetoresistive properties of obtained samples have been investigated in a wide concentration range. The presence of the nanostructure in the obtained samples with Ni nanogranules (2-3 nm) has been confirmed by transmission electron microscopy. There is no observation of any magnetic or magnetoresistive properties at room temperature in the Nix(MgO)100-x composites. These properties were observed at 77 K. The obtained data mean that Curie temperature of the Ni nanogranules is lower then 298 K. This is due to small size of nickel granules and low value of exchange interaction energy in nickel.

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In-Situ Transmission Electron Microscopy for Analysis of Ion-Beam-Growth Processes

MRS Proceedings ◽

10.1557/proc-388-405 ◽

1995 ◽

Vol 388 ◽

Author(s):

Vladimir V. Pankov ◽

Nikolai E. Levchuk ◽

Anatoly P. Dostanko

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Transmission Electron Microscopy Analysis ◽

Ion Beam Etching ◽

Transmission Electron ◽

Beam Sputtering ◽

Electron Microscopy Analysis

AbstractTwo types of systems for in situ transmission electron microscopy analysis of ion-beam etching, ion-beam sputtering and ion-beam assisted deposition are reported. their design, operational features and some applications are presented. Radiation-stimulated diffusion in Mo-Si heterostructure, early growth of ion-beam sputtered in-Sn, in-Sn-O, ZnS:Mn films and recrystallization of ln-Sn-O films during vacuum post-annealing are studied.

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TEM Sample Preparation Tricks for Advanced DRAMs

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0318 ◽

2015 ◽

Author(s):

Ching Shan Sung ◽

Hsiu Ting Lee ◽

Jian Shing Luo

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Tem Analysis ◽

Cross Sectional ◽

Transmission Electron ◽

Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0237 ◽

1997 ◽

Author(s):

K. Doong ◽

J.-M. Fu ◽

Y.-C. Huang

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor ◽

Specimen Preparation ◽

Preparation Technique ◽

Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0313 ◽

2002 ◽

Author(s):

Chin Kai Liu ◽

Chi Jen. Chen ◽

Jeh Yan.Chiou ◽

David Su

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Specimen Preparation ◽

Tem Analysis ◽

Sensitive Issue ◽

Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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