Size Effect in Nix(MgO)100-X Nanocomposites

2010 ◽  
Vol 168-169 ◽  
pp. 361-364 ◽  
Author(s):  
A.A. Grebennikov ◽  
O.V. Stognei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Curie Temperature ◽  
Size Effect ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Nanostructured Composite ◽  
Transmission Electron ◽  
Beam Sputtering

The possibility of obtaining a nanostructured composite in the Ni-Mg-O system by ion-beam sputtering has been investigated. The structural, magnetic and magnetoresistive properties of obtained samples have been investigated in a wide concentration range. The presence of the nanostructure in the obtained samples with Ni nanogranules (2-3 nm) has been confirmed by transmission electron microscopy. There is no observation of any magnetic or magnetoresistive properties at room temperature in the Nix(MgO)100-x composites. These properties were observed at 77 K. The obtained data mean that Curie temperature of the Ni nanogranules is lower then 298 K. This is due to small size of nickel granules and low value of exchange interaction energy in nickel.

Microstructure of polycrystalline near epitaxial (100) and (111) pyrochlore on A (100) MgO Substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 1062-1063
Author(s):  
Shang Hsien Rou
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Physical Phenomena ◽  
Mgo Substrate

New and interesting physical phenomena are being observed via thin film depositions using a variety of processing techniques in different material systems. The present study describes Pb-Zr-Ti-O pyrochlore thin films which were deposited onto (100) MgO substrates using an ion beam sputtering technique. These films are of interest because of their unique microstructure which may provide valuable information in better understanding the epitaxial growth of thin films. Characterization were performed using conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Special TEM sample preparation procedures have been developed, which will be reported elsewhere.The as-deposited pyrochlore thin film is near epitaxial and is oriented with both (100) and (111) parallel to the (100) of the MgO substrate. Figure 1(a) shows the selected area diffraction pattern (SADP) of the pyrochlore thin film taken parallel to the [100] zone axis of the substrate.

scholarly journals Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
C. G. Jin ◽  
X. M. Wu ◽  
L. J. Zhuge
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Ion Beam ◽  
Substrate Surface ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Sic Films

Silicon carbide (SiC) films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

In-Situ Transmission Electron Microscopy for Analysis of Ion-Beam-Growth Processes

1995 ◽  
Vol 388 ◽  
Author(s):  
Vladimir V. Pankov ◽  
Nikolai E. Levchuk ◽  
Anatoly P. Dostanko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Transmission Electron Microscopy Analysis ◽  
Ion Beam Etching ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Electron Microscopy Analysis

AbstractTwo types of systems for in situ transmission electron microscopy analysis of ion-beam etching, ion-beam sputtering and ion-beam assisted deposition are reported. their design, operational features and some applications are presented. Radiation-stimulated diffusion in Mo-Si heterostructure, early growth of ion-beam sputtered in-Sn, in-Sn-O, ZnS:Mn films and recrystallization of ln-Sn-O films during vacuum post-annealing are studied.

Room Temperature Synthesis of Cu2O Nanospheres: Optical Properties and Thermal Behavior

2014 ◽  
Vol 21 (1) ◽  
pp. 108-119 ◽  
Author(s):  
Daniela Nunes ◽  
Lídia Santos ◽  
Paulo Duarte ◽  
Ana Pimentel ◽  
Joana V. Pinto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Behavior ◽  
Room Temperature ◽  
Diffuse Reflectance Spectroscopy ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron

AbstractThe present work reports a simple and easy wet chemistry synthesis of cuprous oxide (Cu2O) nanospheres at room temperature without surfactants and using different precursors. Structural characterization was carried out by X-ray diffraction, transmission electron microscopy, and scanning electron microscopy coupled with focused ion beam and energy-dispersive X-ray spectroscopy. The optical band gaps were determined from diffuse reflectance spectroscopy. The photoluminescence behavior of the as-synthesized nanospheres showed significant differences depending on the precursors used. The Cu2O nanospheres were constituted by aggregates of nanocrystals, in which an on/off emission behavior of each individual nanocrystal was identified during transmission electron microscopy observations. The thermal behavior of the Cu2O nanospheres was investigated with in situ X-ray diffraction and differential scanning calorimetry experiments. Remarkable structural differences were observed for the nanospheres annealed in air, which turned into hollow spherical structures surrounded by outsized nanocrystals.

On the Oriented Growth and Optical Property of ZnO Thin Films Deposited on NaCl (001) Substrate by Ion Beam Sputtering

2010 ◽  
Vol 121-122 ◽  
pp. 52-57
Author(s):  
Shih Wei Mao ◽  
Jung Hsiung Shen ◽  
Der Shin Gan ◽  
Hsing Lu Huang ◽  
Sung Wei Yeh
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Temperature Dependent ◽  
Epitaxial Relationship ◽  
Oriented Growth ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
High Resolution Tem

Temperature dependent oriented growth of ZnO thin film deposited on NaCl (001) substrates using ion beam sputtering was studied by transmission electron microscopy (TEM). Thin films showing a texture due to parallel epitaxy with NaCl (001) as deposited at 100 oC, whereas thin films deposited at 400 oC can form a texture. The microstructure and the epitaxial relationship with the NaCl (001) plane were studied by a high-resolution TEM. The possible causes for the orientation changed with temperature are discussed. The optical transparency of the nanofilms grown from room temperature to 400 oC was measured.

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