Atomic Structure of β-Tantalum Nanocrystallites

2005 ◽  
Vol 11 (6) ◽  
pp. 534-544 ◽  
Author(s):  
Karsten Tillmann ◽  
Andreas Thust ◽  
Andreas Gerber ◽  
Martin P. Weides ◽  
Knut Urban

The structural properties of β-phase tantalum nanocrystallites prepared by room temperature magnetron sputter deposition on amorphous carbon substrates are investigated at atomic resolution. For these purposes spherical aberration-corrected high-resolution transmission electron microscopy is applied in tandem with the numerical retrieval of the exit-plane wavefunction as obtained from a through-focus series of experimental micrographs. We demonstrate that recent improvements in the resolving power of electron microscopes enable the imaging of the atomic structure of β-tantalum with column spacings of solely 0.127 nm with directly interpretable contrast features. For the first time ever, we substantiate the existence of grain boundaries of 30° tilt type in β-Ta whose formation may be well explained by atomic agglomeration processes taking place during sputter deposition.

Author(s):  
D. Gerthsen

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.


2008 ◽  
Vol 14 (5) ◽  
pp. 433-438 ◽  
Author(s):  
Daniel Biggemann ◽  
Marcelo H. Prado da Silva ◽  
Alexandre M. Rossi ◽  
Antonio J. Ramirez

AbstractCrystalline properties of synthetic nanostructured hydroxyapatite (n-HA) were studied using high-resolution transmission electron microscopy. The focal-series-restoration technique, obtaining exit-plane wavefunction and spherical aberration-corrected images, was successfully applied for the first time in this electron-beam-susceptible material. Multislice simulations and energy dispersive X-ray spectroscopy were also employed to determine unequivocally that n-HA particles of different size preserve stoichiometric HA-like crystal structure. n-HA particles with sizes of twice the HA lattice parameter were found. These results can be used to optimize n-HA sinterization parameters to improve bioactivity.


2007 ◽  
Vol 1026 ◽  
Author(s):  
Magnus Garbrecht ◽  
Erdmann Spiecker ◽  
Wolfgang Jäger ◽  
Karsten Tillmann

AbstractThe development of tunable spherical aberration (Cs) imaging correctors for medium-voltage transmission electron microscopes (TEM) offers new opportunities for atomic-scale in-vestigations of materials. A very interesting class of microstructures regarding a variety of dif-ferent physical properties are the transition metal dichalcogenide misfit layer compounds exhibit-ing a high density of incommensurate interfaces due to their stacked nature. In the present study, the benefits coming along with the set-up of negative CS imaging (NCSI) conditions (in TEM) are demonstrated by means of different examples regarding local inhomogeneities in (PbS)1.14NbS2 crystals that can not be dissected in such detail by averaging x-ray techniques.


1995 ◽  
Vol 382 ◽  
Author(s):  
D. G. Stearns ◽  
K. M. Skulina ◽  
M. Wall ◽  
C. S. Alford ◽  
R. M. Bionta ◽  
...  

ABSTRACTMultilayer (ML) structures composed of Mo-Be, Ru-Be and Rh-Be with bilayer periods of - 6 nm have been grown using dc magnetron sputter deposition. The ML microstructure has been characterized using x-ray diffraction and high-resolution transmission electron microscopy, and the normal incidence reflectivity has been measured at soft x-ray wavelengths.


Author(s):  
P. S. Ong ◽  
C. L. Gold

Transmission electron microscopes (TEM) have the capability of producing an electron spot (probe) with a diameter equal to its resolving power. Inclusion of the required scanning system and the appropriate detectors would therefore easily convert such an instrument into a high resolution scanning electron microscope (SEM). Such an instrument becomes increasingly useful in the transmission mode of operation since it allows the use of samples which are considered too thick for conventional TEM. SEM accessories now available are all based on the use of the prefield of the objective lens to focus the beam. The lens is operated either as a symmetrical Ruska lens or its asymmetrical version. In these approaches, the condensor system of the microscope forms part of the reducing optics and the final spot size is usually larger than 20Å.


Author(s):  
Linn W. Hobbs

Intermediate-voltage electron microscopes accelerate electrons to energies U between 200 keV and 600 keV to take advantage of a U-3/8 improvement in resolving power which enables sub-0.2nm atomic structure projections to be routinely imaged. This exciting prospect is, however, purchased at the price of uncertainties in the integrity of the images obtained, because the investigating probe unavoidably perturbs the structure which is being imaged. Such perturbations have been relegated historically to the anecdotal realm of “radiation effects” but are really a perverse manifestation of the Uncertainty Principle. That electron microscopists are able to resolve the structure of solids at all is a tribute to the strength and mutliplicity of atomic bonds in solids and the large “recoiless fraction” (in the parlance of nuclear spectroscopies like the Mossbauer effect) for which the whole solid, and not an individual atom, recoils from the impact of the investigating probe.Atomic structure is sensitive to the impact of incident IVEM electrons because they lose energy (at a rate of order 1 GeV/m) in traversing a solid, a small portion of which is available as kinetic energy to restructure atomic positions. About 98% of the energy loss goes into electronic excitations which can in certain materials (notably organic materials, halides, silicates and almost anything explosive) destabilize atomic positions within the specimen interior with unnervingly high efficiency by radiolytic processes. Analogous radiolytic loss or restructuring of surface atoms, whose bonding constraints are fewer than for atoms in the interior, has been coined “desorption induced by electronic transitions” (DIET). Of the remaining 2% of the energy loss, which is transferred instead to atomic nuclei, most goes into the generation of heat (the eventual fate of most non-radiative electronic transitions as well), but about 1 part in 105 (or 1 part in 107 overall) is available to generate atomic displacements ballistically, by direct knockon: at the surface for almost all solids examined by IVEM (leading to sputtering) and in the interior for many medium atomic-weight solids.


2010 ◽  
Vol 18 (2) ◽  
pp. 38-40 ◽  
Author(s):  
Walter Gordon Morris ◽  
Squatter Madras ◽  
Alwyn Eades

There have been many attempts to improve the resolution of electron microscopes. Transmission electron microscopes are normally limited in resolution by a balance between the diffraction limit (which could be overcome by the use of a large objective aperture) and the spherical aberration of the lenses used (which could be overcome by the use of a small objective aperture). In recent years successful attempts have been made to achieve resolutions beyond this limit by holography and also by the development of aberration correctors.


Author(s):  
Etienne de Harven ◽  
Toru Sato

Observations of biological ultrastructures bv electron microscopy are, in most cases, limited to a resolution of approximately 20 Å while, on the other hand, today's electron microscopes easily resolve 2 Å on non-biological objects. Thus, one order of magnitude seems generally unavailable for biological research. In order to take fuller advantage of the maximum resolving power of these microscopes, test specimens should first be studied to increase technical efficiency in high resdution imaging. For example, the graphite high resolution test, originally proposed by Heidenreich has proven of great value in this respect. However, the usefulness of this test re-1 mained limited as long as the direct magnification of the microscopes did not allow the visual recognition of the 3.4 Å periodic structure of graphite.


Author(s):  
Nobuo Tanaka ◽  
Kazuhiro Mihama ◽  
Hiroshi Kakibayashi ◽  
Kazuhiro Ito

Recent progress of transmission electron microscope(TEM) enables us to perform electron diffraction from nm-sized areas(nano-diffraction) with a good correspondence with HREM. Nano-diffraction is useful for obtaining local structural information. One of the present authors (NT) applied the method to interfaces of GaAs/AlGaAs superlattices for detection of compositional variation of aluminum(Al) and to nm-sized γ-iron crystallites in MgO for analysis of the strain. Although nano-diffraction has been performed successfully in STEM instruments by Cowley and others, the method in TEM has an advantage in a good compatibility with the structure-imaging method and the established bright and dark-field(BF & DF) imaging methods. In the present paper we report for the first time the detection of lattice strain around interfaces of InP/InGaP strained superlattices as well as results of GaAs/InGaAs, GaAs/AlGaAs and Ge/Si superlattices by using the TEM nano-diffraction method.The nano-diffraction was performed with 200 kV transmission electron microscopes of Cs = 1.2 mm(JEM-2000FX) and Cs = 0.5mm(JEM-2010L Before focusing an election probe, HREM and DF images of the interfaces were taken in the [100] zone axis at 100-400 k in direct magnification.


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