3D non-destructive grain orientation mapping of polycrystalline materials using 3D-XRD and TEM

2012 ◽  
Vol 18 (S2) ◽  
pp. 728-729
Author(s):  
X. Huang ◽  
H.F. Poulsen ◽  
S. Schmidt ◽  
H.H. Liu ◽  
A. Godfrey
Keyword(s):  
Grain Orientation ◽  
Polycrystalline Materials ◽  
Orientation Mapping ◽  
Non Destructive ◽  
Xrd And Tem

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Application of Ultrasonic Inspection for Microstructure Analysis of Stainless Steel Grade 304L

2019 ◽  
Vol 798 ◽  
pp. 32-37
Author(s):  
Kittichai Sojiphan ◽  
Phongsathon Wangsupangkul ◽  
Tanapat Chailampangsuksakul
Keyword(s):  
Stainless Steel ◽  
Attenuation Coefficient ◽  
Ultrasonic Inspection ◽  
Correlation Study ◽  
Polycrystalline Materials ◽  
Destructive Testing ◽  
Electron Backscattered Diffraction ◽  
Heat Treated ◽  
Mechanical Waves ◽  
Non Destructive

Ultrasonic inspection is one of the most widely used non-destructive testing methods for inspection of fabricated structures and components. During ultrasonic inspection, mechanical waves in form of ultrasound are transmitted and propagate through volume of parts or components and reflect when the waves meet with the existing interface such as flaws in the welds. In addition to detection of flaws or defects within the structures, ultrasonic inspection is also used for determination of component thickness as well as characterization of microstructure of different materials. As the ultrasound is transmitted through media, the loss of ultrasound amplitude is referred to as acoustic attenuation. This attenuation effects greatly result from heterogeneity, anisotropy, and different grain sizes of crystalline media the ultrasound goes through. In order to develop the ultrasonic backscattering models for polycrystalline materials, experimental results of the correlation between the changes in attenuation coefficient and the actual microstructure of polycrystalline materials are necessary. This research article presents the preliminary results of this correlation study in stainless steel 304L specimens in as-received conditions compared with different annealed and heat-treated conditions. Such correlations of attenuation coefficient, hardness, and grain size will be used as baseline for future additional characterization technique such as electron backscattered diffraction to better understand the attenuation effects for textured polycrystalline materials.

Grain Orientation Mapping and Spatially Resolved Strain Measurements for Polycrystalline Films by X-Ray Microdiffraction

1995 ◽  
Vol 403 ◽  
Author(s):  
P.-C. Wang ◽  
G. S. Cargill ◽  
I. C. Noyan ◽  
E. G. Liniger
Keyword(s):  
Grain Orientation ◽  
Real Space ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Polycrystalline Films ◽  
Reciprocal Space Mapping ◽  
Strain Measurements ◽  
X Ray ◽  
Spatially Resolved ◽  
Orientation Mapping

AbstractWe describe spatially resolved grain orientation mapping of polycrystalline films using a synchrotron-based x-ray microdiffraction system. The system consists of a tapered glass capillary as a white x-ray concentrator, an energy-dispersive solid state detector and an x-y-z sample stage. Two mapping modes are discussed: reciprocal-space mapping and real-space mapping. Information about the orientations of grains within the irradiated volume is determined by reciprocal-space mapping. The locations of grains having a specified orientation are determined by real-space mapping. Examples are shown for blanket films of AI(4 wt.% Cu) 4μm-thick and 0.5μm thick. Results are also shown for 10μm-wide and μm-wide pure lines. X-ray beams of 10inm diameter were used for these measurements. Spatially resolved thermal strain measurements were made for a single 10μm-wide, 200μm-long passivated Al line, and they were found to be consistent with calculations based on equi-biaxial thermal stress within the line.

scholarly journals Grain orientation mapping of passivated aluminum interconnect wires with X-ray micro-diffraction

1998 ◽  
Author(s):  
A.A. MacDowell ◽  
H.A. Padmore ◽  
A.C. Thompson ◽  
C.H. Chang ◽  
J.R. Patel
Keyword(s):  
Grain Orientation ◽  
X Ray ◽  
Orientation Mapping

A far-field scattering model in textured polycrystals with ellipsoidal grains of arbitrary crystal symmetry

2020 ◽  
Vol 25 (5) ◽  
pp. 1155-1171
Author(s):  
Gaofeng Sha
Keyword(s):  
Elastic Waves ◽  
Field Approximation ◽  
Crystal Symmetry ◽  
Polycrystalline Materials ◽  
Far Field ◽  
Efficient Tool ◽  
Practical Applications ◽  
Full Wave ◽  
Non Destructive ◽  
High Computational Efficiency

Modeling the scattering-induced attenuation of elastic waves in heterogeneous polycrystals has practical applications in seismology and non-destructive evaluation. However, attenuation modeling for polycrystals with preferred crystallographic orientation (statistically anisotropic or textured polycrystals) has not been well studied. The far-field approximation (FFA) model, which is applicable for arbitrary crystal (triclinic) symmetry and valid for the whole frequency range (Rayleigh region, stochastic regime, and geometric region), has been reported for texture-free polycrystalline materials. This paper extends the FFA model to textured polycrystals with ellipsoidal grains of arbitrary crystal symmetry. This FFA model for textured polycrystals encompasses two advantages: a simple form of dispersion equation and high computational efficiency. Furthermore, this FFA model can predict both the attenuation and phase velocity of elastic waves in textured polycrystals. The FFA model in this study has also been validated by comparison with the full-wave second-order attenuation model on textured polycrystals of triclinic grains. This work provides a simple and efficient tool to predict the elastic wave behavior in heterogeneous polycrystalline materials.

Grain Orientation Mapping of Polycrystalline Organic Semiconductor Films by Transverse Shear Microscopy

2008 ◽  
Vol 20 (21) ◽  
pp. 4033-4039 ◽  
Author(s):  
Vivek Kalihari ◽  
E. B. Tadmor ◽  
Greg Haugstad ◽  
C. Daniel Frisbie
Keyword(s):  
Transverse Shear ◽  
Organic Semiconductor ◽  
Grain Orientation ◽  
Semiconductor Films ◽  
Orientation Mapping

Non-Destructive Analysis of Surface Stresses Using Grazing Incident X-Ray Diffraction

2005 ◽  
Vol 490-491 ◽  
pp. 143-148
Author(s):  
Chedly Braham ◽  
Andrzej Baczmanski ◽  
Wilfrid Seiler ◽  
N. Shiraki
Keyword(s):  
Sample Surface ◽  
Polycrystalline Materials ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
X Ray ◽  
Lattice Strains ◽  
Crystallographic Planes ◽  
Destructive Measurement ◽  
Non Destructive

The X-ray diffraction measurements based on the grazing incident geometry were applied to determine lattice strains in polycrystalline materials. This method enables a non-destructive measurement at chosen depth below the sample surface. The volume, for which the stress is measured, is well defined and it does not vary during experiment. The multireflection method was used for analysis of the experimental results since the interplanar spacings were measured for various orientation of the scattering vector as well as for various crystallographic planes {hkl}. Applying two different wavelengths of X- ray radiation and various incident angles non-destructive measurements of the residual stresses in function of penetration depth were performed. The variation of stresses in plastically deformed surface layers of steel samples was successfully determined and the values of the stresses were confirmed by standard diffraction measurement.

Automated Crystal Orientation Mapping (ACOM) of Thin Metallization Layers and Interconnects

1997 ◽  
Vol 472 ◽  
Author(s):  
R.A. Schwarzer
Keyword(s):  
Electron Microscope ◽  
Grain Orientation ◽  
Crystal Orientation ◽  
Silicon Substrates ◽  
Orientation Measurement ◽  
Orientation Mapping ◽  
Grain Orientations ◽  
Aluminum Metallization ◽  
Crystal Orientation Mapping

ABSTRACTA system for acquisition and interpretation of Kikuchi patterns with computer-controlled electron microscopes is presented. It enables interactive as well as fully automated determination of individual grain orientations. Special features for automated crystal orientation mapping (ACOM) with the scanning electron microscope (SEM) are digital beam scan, autocalibration and dynamic focus controlled by the computer. With the present setup about three orientations per second can be measured unattendedly. In the transmission electron microscope (TEM) the on-line determination of Burgers vectors and identification of deformation systems are based on crystal orientation measurement. The characterization of dislocations is facilitated by the simulation of diffraction patterns on the computer as a function of specimen tilt.Crystal orientation maps are obtained by assigning to the raster points in the image a color specific for the grain orientation, the misorientation or character of the grain boundary. The dala set of grain orientations is used to calculate the Schmid factors grain by grain, the orientation distribution function (ODF) and the correlated as well as the uncorrelated misorientation distribution functions (MODF) which characterize crystallographic texture in a statistical sense.Applications of individual grain orientation measurement are:. Thermomechanical hillocks in aluminum metallization layers on silicon substrates. Stress-induced grain growth in aluminum metallization layers on silicon substrates. Electromigration voids and hillocks in aluminum interconnectsA working hypothesis for electromigration failure, based on experimental findings, is discussed

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