scholarly journals Laser Assisted Flow Deposition: a New Method to Grow ZnO

2012 ◽  
Vol 18 (S5) ◽  
pp. 87-88 ◽  
Author(s):  
J. Rodrigues ◽  
M. R. N. Soares ◽  
A. J. S. Fernandes ◽  
T. Monteiro ◽  
F. M. Costa
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Bulk Material ◽  
Wide Band ◽  
Modern Technology ◽  
New Method ◽  
Wide Band Gap ◽  
Fundamental Science ◽  
Technology Applications

Zinc oxide (ZnO) has been one of the most studied materials in the last decades. Either as bulk material, epilayers or nanostructures, this direct wide band gap semiconductor is known to possess great potential for fundamental science and modern technology applications.

Novel sputtering method to obtain wide band gap and low resistivity in as-deposited magnesium doped zinc oxide films

2019 ◽  
Vol 104 ◽  
pp. 104646 ◽  
Author(s):  
M. Loeza-Poot ◽  
R. Mis-Fernández ◽  
I. Rimmaudo ◽  
E. Camacho-Espinosa ◽  
J.L. Peña
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Oxide Films ◽  
Wide Band ◽  
Wide Band Gap ◽  
Low Resistivity ◽  
Zinc Oxide Films

Defect-induced magnetism in undoped and Mn-doped wide band gap zinc oxide grown by aerosol spray pyrolysis

2014 ◽  
Vol 311 ◽  
pp. 14-26 ◽  
Author(s):  
D.E. Motaung ◽  
I. Kortidis ◽  
D. Papadaki ◽  
S.S. Nkosi ◽  
G.H. Mhlongo ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Wide Band ◽  
Wide Band Gap ◽  
Aerosol Spray ◽  
Mn Doped ◽  
Aerosol Spray Pyrolysis

Aluminum doped zinc oxide wide band-gap n-type optical window for μc-Si superstrate solar cell

Vacuum ◽  
2015 ◽  
Vol 120 ◽  
pp. 14-18 ◽  
Author(s):  
F. Khaled ◽  
A. Bouloufa ◽  
K. Djessas ◽  
R. Mahamdi ◽  
I. Bouchama
Keyword(s):  
Zinc Oxide ◽  
Solar Cell ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Optical Window ◽  
Aluminum Doped Zinc Oxide

Transport in high mobility amorphous wide band gap indium zinc oxide films

2005 ◽  
Vol 202 (9) ◽  
pp. R95-R97 ◽  
Author(s):  
R. Martins ◽  
P. Barquinha ◽  
A. Pimentel ◽  
L. Pereira ◽  
E. Fortunato
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Oxide Films ◽  
High Mobility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide

scholarly journals Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substrates

2018 ◽  
Vol 6 (23) ◽  
pp. 6297-6304 ◽  
Author(s):  
Sebastian Siol ◽  
Yanbing Han ◽  
John Mangum ◽  
Philip Schulz ◽  
Aaron M. Holder ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Indium Zinc Oxide ◽  
Amorphous Substrates ◽  
Oxide Substrate ◽  
P Type

The wurtzite polymorph of MnTe with a wider band gap and moderate p-type doping is stabilized on an amorphous indium zinc oxide substrate.

Halide‐Modulated Functionality of Wide Band Gap Zinc Oxide Semiconductor Nanoparticle

2018 ◽  
Vol 3 (23) ◽  
pp. 6382-6393 ◽  
Author(s):  
Tuhin Kumar Maji ◽  
Prasenjit Kar ◽  
Harahari Mandal ◽  
Chinmoy Bhattacharya ◽  
Debjani Karmakar ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Semiconductor ◽  
Wide Band Gap ◽  
Semiconductor Nanoparticle

Effect of Dopants on ZnO Mediated Photocatalysis of Dye Bearing Wastewater: A Review

2013 ◽  
Vol 757 ◽  
pp. 165-174 ◽  
Author(s):  
Parameswara Rao Potti ◽  
Vimal Chandra Srivastava
Keyword(s):  
Zinc Oxide ◽  
Surface Modification ◽  
Band Gap ◽  
Solar Surface ◽  
Wide Band ◽  
High Energy ◽  
Light Sources ◽  
Wide Band Gap ◽  
Degradation Of Dyes

This article provides the brief overview on effect of dopant on the performance of zinc oxide (ZnO) as photocatalysts for the degradation of dye wastewaters. ZnO itself is a semi conductor having wide band gap (3.37eV), thus requiring high energy to work as a photocatalyst. To decrease the band gap or to alter its requirement of high energy from light sources like UV to visible (solar), surface modification or doping of ZnO is necessary. This paper discusses how dopant modifies the characteristics of ZnO which helps in degradation of dyes in colored wastewaters.

Improving the photoresponsivity and reducing the persistent photocurrent effect of visible-light ZnO/quantum-dot phototransistors via a TiO2 layer

2020 ◽  
Vol 8 (46) ◽  
pp. 16384-16391
Author(s):  
Byung Jun Kim ◽  
Sungho Park ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Jong-Am Hong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Zinc Oxide ◽  
Quantum Dot ◽  
Visible Light ◽  
Band Gap ◽  
Wide Band ◽  
Colloidal Quantum Dots ◽  
Tio2 Layer ◽  
Wide Band Gap

Conventional visible-light phototransistors based on the heterostructure of wide band gap zinc oxide (ZnO) and colloidal quantum-dots (CdSe/ZnS QDs) have been studied.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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