Multislice Imaging of Integrated Circuits by X-ray Ptychography

A method for nondestructively visualizing multisection nanostructures of integrated circuits by X-ray ptychography with a multislice approach is proposed. In this study, tilt-series ptychographic diffraction data sets of a two-layered circuit with a ∼1.4 µm gap at nine incident angles are collected in a wideQrange and then artifact-reduced phase images of each layer are successfully reconstructed at ∼10 nm resolution. The present method has great potential for the three-dimensional observation of flat specimens with thickness on the order of 100 µm, such as three-dimensional stacked integrated circuits based on through-silicon vias, without laborious sample preparation.

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Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0154 ◽

2015 ◽

Author(s):

Halit Dogan ◽

Md Mahbub Alam ◽

Navid Asadizanjani ◽

Sina Shahbazmohamadi ◽

Domenic Forte ◽

...

Keyword(s):

Integrated Circuits ◽

Integrated Circuit ◽

3D Imaging ◽

Three Dimensional ◽

Serial Sectioning ◽

Promising Technique ◽

Flash Memories ◽

X Ray ◽

3D Information ◽

The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

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Impact of X-Ray Tomography on the Reliability of Integrated Circuits

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2656839 ◽

2017 ◽

Vol 17 (1) ◽

pp. 59-68 ◽

Cited By ~ 5

Author(s):

Mahbub Alam ◽

Haoting Shen ◽

Navid Asadizanjani ◽

Mark Tehranipoor ◽

Domenic Forte

Keyword(s):

Integrated Circuits ◽

X Ray

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High resolution 3D imaging of integrated circuits by x-ray ptychography

Image Sensing Technologies: Materials, Devices, Systems, and Applications V ◽

10.1117/12.2304835 ◽

2018 ◽

Cited By ~ 1

Author(s):

Michal Odstrcil ◽

Mirko Holler ◽

Jörg Raabe ◽

Manuel Guizar-Sicairos

Keyword(s):

High Resolution ◽

Integrated Circuits ◽

3D Imaging ◽

X Ray

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Method for integrated circuits total ionizing dose hardness testing based on combined gamma- and x-ray irradiation facilities

Facta universitatis - series Electronics and Energetics ◽

10.2298/fuee1403329s ◽

2014 ◽

Vol 27 (3) ◽

pp. 329-338 ◽

Cited By ~ 10

Author(s):

Armen Sogoyan ◽

Alexey Artamonov ◽

Alexander Nikiforov ◽

Dmitry Boychenko

Keyword(s):

Integrated Circuits ◽

Hardness Testing ◽

Total Ionizing Dose ◽

X Ray ◽

Step Algorithm ◽

Irradiation Facilities

A method is proposed to test microelectronic parts total ionizing dose hardness based on a rationally balanced combination of gamma- and X-ray irradiation facilities. The scope of this method is identified, and a step-by-step algorithm of combined testing is provided, along with a test example of the method application.

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Synchrotron radiation X-ray lithography for the fabrication of sub-quartermicron large-scale-integrated circuits.

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.6.445 ◽

1993 ◽

Vol 6 (4) ◽

pp. 445-456 ◽

Cited By ~ 1

Author(s):

KIMIYOSHI DEGUCHI

Keyword(s):

Synchrotron Radiation ◽

Integrated Circuits ◽

Large Scale ◽

X Ray

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X-RAY FLUORESCENCE ANALYSIS FOR ULTRA-LARGE SCALE INTEGRATED CIRCUITS

Röntgen Centennial ◽

10.1142/9789812819581_0035 ◽

1997 ◽

pp. 694-698

Author(s):

S. S. LADERMAN

Keyword(s):

Integrated Circuits ◽

Large Scale ◽

Fluorescence Analysis ◽

X Ray

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Characterization of Ti/TiN Films and SiO2/Ti Interfaces by Use of X-Ray Photoelectron Spectroscopy

MRS Proceedings ◽

10.1557/proc-318-631 ◽

1993 ◽

Vol 318 ◽

Cited By ~ 1

Author(s):

Joffre Bernard ◽

Ercan Adem ◽

Seshadri Ramaswami

Keyword(s):

Integrated Circuits ◽

Photoelectron Spectroscopy ◽

Ambient Air ◽

Tin Films ◽

X Ray ◽

Surface And Interface ◽

Surface Analysis Techniques ◽

Contamination Levels ◽

Reflective Coatings

ABSTRACTThe deposition and processing of thin films, such as barrier metals and anti-reflective coatings, can be enhanced using the information provided by various surface analysis techniques. We will show the application of x-ray photoelectron spectroscopy(XPS) to the production of Ti and TiN films suitable for use in ULSI CMOS integrated circuits. XPS can separate Ti and N photoelectron peaks and detect low (1.0-5.0 atomic%) contamination levels while providing surface and interface chemical state information. In this paper we will show that a) the effect of TiN deposition on subsequent Ti film quality from the same Ti target was determined to be minimal, b) the relation of anneal temperature to the extent of SiO2 reduction by Ti metal was characterized on SiO2/Ti/TiN structures for temperatures from 600°C to 800°C, and c) the absorption of O into TiN films from ambient air was detected and confirmed.

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Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

Journal of Synchrotron Radiation ◽

10.1107/s1600577520005494 ◽

2020 ◽

Vol 27 (4) ◽

pp. 1023-1032 ◽

Cited By ~ 1

Author(s):

Ke Li ◽

Biao Deng ◽

Haipeng Zhang ◽

Fucheng Yu ◽

Yanling Xue ◽

...

Keyword(s):

Integrated Circuits ◽

Phase Contrast ◽

Phase Retrieval ◽

Comprehensive Evaluation ◽

Linear Interpolation ◽

Curvature Radius ◽

Element Analysis ◽

X Ray ◽

3D Microstructure

Comprehensive evaluation of through-silicon via (TSV) reliability often requires deterministic and 3D descriptions of local morphological and statistical features of via formation with the Bosch process. Here, a highly sensitive phase-contrast X-ray microtomography approach is presented based on recorrection of abnormal projections, which provides comprehensive and quantitative characterization of TSV etching performance. The key idea is to replace the abnormal projections at specific angles in principles of linear interpolation of neighboring projections, and to distinguish the interface between silicon and air by using phase-retrieval algorithms. It is demonstrated that such a scheme achieves high accuracy in obtaining the etch profile based on the 3D microstructure of the vias, including diameter, bottom curvature radius, depth and sidewall angle. More importantly, the 3D profile error of the via sidewall and the consistency of parameters among all the vias are achieved and analyzed statistically. The datasets in the results and the 3D microstructure can be applied directly to a reference and model for further finite element analysis. This method is general and has potentially broad applications in 3D integrated circuits.

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