Chemical Vapor Deposition Fabrication and Characterization of Silica-Coated Carbon Fiber Ultramicroelectrodes

1995 ◽  
Vol 67 (15) ◽  
pp. 2592-2598 ◽  
Author(s):  
Gang. Zhao ◽  
Dean M. Giolando ◽  
Jon R. Kirchhoff
2005 ◽  
Vol 483-485 ◽  
pp. 841-844 ◽  
Author(s):  
Einar Ö. Sveinbjörnsson ◽  
H.Ö. Ólafsson ◽  
G. Gudjónsson ◽  
Fredrik Allerstam ◽  
Per Åke Nilsson ◽  
...  

We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.


2006 ◽  
Vol 16 (4) ◽  
pp. 225-230
Author(s):  
Nam-Goo Cha ◽  
Chang-Hwa Park ◽  
Min-Soo Cho ◽  
Kyu-Chae Kim ◽  
Jin-Goo Park ◽  
...  

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