Fabrication and Characterization of a Porous Silicon Drug Delivery System with an Initiated Chemical Vapor Deposition Temperature-Responsive Coating

Langmuir ◽  
2015 ◽  
Vol 32 (1) ◽  
pp. 301-308 ◽  
Author(s):  
Steven J. P. McInnes ◽  
Endre J. Szili ◽  
Sameer A. Al-Bataineh ◽  
Roshan B. Vasani ◽  
Jingjing Xu ◽  
...  
Keyword(s):  
Drug Delivery ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Temperature Responsive ◽  
Initiated Chemical Vapor Deposition ◽  
Fabrication And Characterization

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

2005 ◽  
Vol 483-485 ◽  
pp. 841-844 ◽  
Author(s):  
Einar Ö. Sveinbjörnsson ◽  
H.Ö. Ólafsson ◽  
G. Gudjónsson ◽  
Fredrik Allerstam ◽  
Per Åke Nilsson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Field Effect ◽  
High Field ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Fabrication And Characterization ◽  
Peak Field

We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.

scholarly journals Fabrication and Characterization of an Antistiction Layer by PECVD (plasma enhanced chemical vapor deposition) for Metal Stamps

2006 ◽  
Vol 16 (4) ◽  
pp. 225-230
Author(s):  
Nam-Goo Cha ◽  
Chang-Hwa Park ◽  
Min-Soo Cho ◽  
Kyu-Chae Kim ◽  
Jin-Goo Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fabrication And Characterization
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