High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
2005 ◽
Vol 483-485
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pp. 841-844
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Keyword(s):
We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.
2010 ◽
Vol 157
(12)
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pp. H1110
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Keyword(s):
2010 ◽
Vol 256
(8)
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pp. 2496-2499
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2006 ◽
Vol 15
(9)
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pp. 1484-1491
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1998 ◽
Vol 304
(1-2)
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pp. 35-42
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2019 ◽
Vol 21
(10)
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pp. 105502
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2010 ◽
Vol 121
(3)
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pp. 397-401
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2013 ◽
Vol 52
(11R)
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pp. 110106
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