In order to study the isotopic effects in semiconductor materials, single crystals of high chemical and isotopic purity are required. The reliability of the obtained data on the magnitude and the direction of isotopic shifts depends on the accuracy of determining the concentration of all stable isotopes. In the isotopic analysis of enriched “silicon-28” with a high degree of enrichment (> 99.99%), it is necessary to determine the impurities of 29Si and 30Si isotopes at the level of 10-3 ¸ 10-5 at. %. At this concentration level, these isotopes can be considered as impurities. It is difficult to achieve high measurement accuracy with simultaneous registration of the main and “impurity” isotopes in such a wide range of concentrations. The registration of analytical signals of silicon isotopes must be carried out in the solutions with different matrix concentrations. The use of the solutions with the high concentration of the matrix element requires the introduction of corrections for matrix noise and the drift of the instrument sensitivity during the measurement. It is possible to reduce the influence of the irreversible non-spectral interference and sensitivity drift by using the method of internal standardization. The inconsistency of the literature data on the selection criteria for the internal standard required studying the behavior of the signals of the “candidates for the internal standard” for the ELEMENT 2 single-collector high-resolution inductively coupled plasma mass spectrometer on the matrix element concentration and the nature of the solvent, as well as on the solution nebulizing time. Accounting for the irreversible non-spectral matrix noise and instrumental drift in isotopic analysis of enriched “silicon-28” and initial 28SiF4 by inductively coupled plasma mass spectrometry had allowed us to reduce by 3-5 times the random component and by more than an order of magnitude the systematic component of the measurement error in comparison with the external standard method. This made it possible to carry out, with sufficient accuracy, the operational control of the isotopic composition of enriched “silicon-28”, both in the form of silicon tetrafluoride and polycrystalline silicon obtained from it, using a single serial device in the range of isotopic concentrations 0.0001–99.999%.
Isotope analysis of highly enriched “silicon-28” by high-resolution inductively coupled plasma mass spectrometry using an internal standard
