Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates

2021 ◽  
Author(s):  
Thilo Hepp ◽  
Julian Veletas ◽  
Robin Günkel ◽  
Oliver Maßmeyer ◽  
Johannes Glowatzki ◽  
...  
Keyword(s):  
Long Wavelength ◽  
Gaas Substrates ◽  
Wavelength Emission

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

2000 ◽  
Vol 31 (1) ◽  
pp. 1-7 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Self Organized ◽  
Gaas Substrates ◽  
Wavelength Emission

InAs quantum dots on GaAs substrates with InGaAs strain reducing layer for long wavelength emission

2003 ◽  
Vol 0 (4) ◽  
pp. 1193-1196 ◽  
Author(s):  
S. Saravanan ◽  
P. O. Vaccaro ◽  
J. M. Zanardi ◽  
K. Kubota ◽  
T. Aida
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Gaas Substrates ◽  
Wavelength Emission

Influence of solvent polarity on the dual fluorescence of p-N,N-dimethylaminobenzonitrile: An AM1 theoretical study

1990 ◽  
Vol 55 (8) ◽  
pp. 1891-1895 ◽  
Author(s):  
Peter Ertl
Keyword(s):  
Excited State ◽  
Theoretical Study ◽  
Solvent Polarity ◽  
Semiempirical Method ◽  
Dual Fluorescence ◽  
Long Wavelength ◽  
Polar Media ◽  
Wavelength Emission ◽  
Ground State Geometry ◽  
Influence Of Solvent

Twisting of the NMe2 group in p-N,N-dimethylaminobenzonitrile (DMABN) was investigated using AM1 semiempirical method with configuration interaction. Effect of polar media was considered by placing + and - charge centers ("sparkles") at appropriate places opposite the molecule. Optimized ground state geometry of DMABN is slightly twisted with the lowest vertical excited state of 1B character. As the polarity of media increases and/or the - NMe2 group twists, the symmetric 1A excited state having considerable charge separation becomes energetically favorable. Anomalous long-wavelength emission of DMABN comes from this state.

Metamorphic growth of long-wavelength saturable absorber on GaAs substrates

2005 ◽  
Author(s):  
A. Vainionpaa ◽  
S. Suomalainen ◽  
O. Tengvall ◽  
T. Hakulinen ◽  
R. Herda ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Long Wavelength ◽  
Gaas Substrates

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1040-L1042 ◽  
Author(s):  
Makoto Kudo ◽  
Kiyoshi Ouchi ◽  
Jun-ichi Kasai ◽  
Tomoyoshi Mishima
Keyword(s):  
Quantum Wells ◽  
Lattice Strain ◽  
Type Ii ◽  
Long Wavelength ◽  
Gaas Substrates ◽  
Type Ii Quantum Wells

Controllable supramolecular chain aggregation through nano-steric hindrance functionalization for multi-color larger-area electroluminescence

2018 ◽  
Vol 6 (26) ◽  
pp. 7018-7023 ◽  
Author(s):  
Man Xu ◽  
Wei-Biao Wang ◽  
Lu-Bing Bai ◽  
Meng-Na Yu ◽  
Ya-Min Han ◽  
...  
Keyword(s):  
Steric Hindrance ◽  
Device Performance ◽  
Effective Strategy ◽  
Long Wavelength ◽  
Wavelength Emission ◽  
Supramolecular Chain

Suppression of hierarchical chain aggregationvianano-steric hindrance functionalization is an effective strategy to restrain long-wavelength emission and improving the device performance.

First-principles identification of VI+Cui defect cluster in cuprous iodide: origin of red light photoluminescence

2022 ◽  
Author(s):  
Dingrong Liu ◽  
Zenghua Cai ◽  
Yu-Ning Wu ◽  
Shiyou Chen
Keyword(s):  
First Principles ◽  
Light Emission ◽  
Red Light ◽  
Defect Cluster ◽  
Intrinsic Point Defect ◽  
Long Wavelength ◽  
Type Semiconductor ◽  
Display Technology ◽  
Wavelength Emission ◽  
P Type

Abstract The γ-phase Cuprous Iodide (CuI) emerges as a promising transparent p-type semiconductor for next-generation display technology because of its wide direct band gap, intrinsic p-type conductivity, and high carrier mobility. Two main peaks are observed in its photoluminescence (PL). One is short wavelength (410-430 nm) emission, which is well attributed to the electronic transitions at Cu vacancy, whereas the other long wavelength emission (680-720 nm) has not been fully understood. In this paper, through first-principles simulations, we investigate the formation energies and emission line shape for various defects, and discover that the intrinsic point defect cluster V_I+Cu_i^(2+) is the source of the long wavelength emission. Our finding is further supported by the prediction that the defect concentration decreases dramatically as the chemical condition changes from Cu-rich to I-rich, explaining the significant reduction in the red light emission if CuI is annealed in abundant I environment.

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