scholarly journals Studying Hemoglobin and a Bare Metal–Porphyrin Complex Immobilized on Functionalized Silicon Surfaces Using Synchrotron X-ray Reflectivity

2019 ◽  
Vol 123 (35) ◽  
pp. 7492-7503
Author(s):  
Rudra N. Samajdar ◽  
Chandan Kumar ◽  
P. Viswanath ◽  
Aninda J. Bhattacharyya
Keyword(s):  
Silicon Surfaces ◽  
Bare Metal ◽  
Metal Porphyrin ◽  
X Ray ◽  
Porphyrin Complex

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Trace Analysis of Al on Silicon Surfaces by Ultra‐soft X‐Ray Emission Spectroscopy

2003 ◽  
Vol 36 (1-2) ◽  
pp. 93-98
Author(s):  
G. Andermann ◽  
T. Scimeca ◽  
C. H. Zhang
Keyword(s):  
Trace Analysis ◽  
Emission Spectroscopy ◽  
Silicon Surfaces ◽  
X Ray

Wettability and Nanotribological Response of Silicon Surfaces Functionalized by Ion Implantation

2012 ◽  
Vol 730-732 ◽  
pp. 257-262
Author(s):  
Bruno Nunes ◽  
Sergio Magalhães ◽  
Nuno Franco ◽  
Eduardo Alves ◽  
Ana Paula Serro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Silicon Surfaces ◽  
Iron Ions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

Aiming to improve the nanotribological response of Si-based materials we implanted silicon wafers with different fluences of iron ions (up to 2x1017 cm-2). Implantation was followed by annealing treatments at temperatures from 550°C to 1000°C. The implanted surfaces were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and wettability tests. Then, samples were submitted to AFM-based nanowear tests. We observe an increase of both hidrophobicity and and wear resistance of the implanted silicon, indicating that ion implantation of Si can be a route to be deeper explored in what concerns tribomechanical improvement of Si.

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

Push‐Pull Effect at Formation of Sitting‐Atop Metal‐Porphyrin Complex in Solvating Media: H‐Bonding and Electrostatic Repulsion

2022 ◽  
Vol 7 (1) ◽  
Author(s):  
Vladimir A. Burmistrov ◽  
Irina P. Trifonova ◽  
Mikhail K. Islyaikin ◽  
Aleksander S. Semeikin ◽  
Oskar I. Koifman
Keyword(s):  
Electrostatic Repulsion ◽  
Metal Porphyrin ◽  
Porphyrin Complex

scholarly journals Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 295-298 ◽  
Author(s):  
Wen Biao YING ◽  
Yusuke MIZOKAWA ◽  
Yoshitomo KAMIURA ◽  
Yong Bing YU ◽  
Masafumi NISHIMATSU ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Secondary Ion

Observations of Lattice Distortions near Silicon Surfaces Implanted with Low-Energy Nitrogen Ions by Reflection X-ray Topography

2005 ◽  
Vol 44 (8) ◽  
pp. 6277-6282
Author(s):  
Koji Futagami ◽  
Taichiro Fukumori ◽  
Noboru Tsukuda ◽  
Kiyohiro Kuroki
Keyword(s):  
Low Energy ◽  
Silicon Surfaces ◽  
X Ray ◽  
Nitrogen Ions ◽  
Lattice Distortions

Microstructures and Properties of Fe/B-Fe Coating Used in Circulating Fluidized Bed Boiler

2011 ◽  
Vol 66-68 ◽  
pp. 1528-1532
Author(s):  
Qi Fa Tian ◽  
Hong Fei Sun
Keyword(s):  
Electron Probe ◽  
Circulating Fluidized Bed ◽  
Steel Substrate ◽  
Electric Arc ◽  
Bare Metal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Mechanical Performances ◽  
Electronic Microscope

Electric arc praying technology was used to produce Fe/B-Fe coating on the carbon steel substrate. The microstructures was studied by means of scanning electronic microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and electron probe microanalysis (EPMA). Mechanical performances, wear resistance of coating were tested . The results showed that the resistance to abrasion and corrosion of Fe/B-Fe coating was respectively 16 times and 5 to 6 times higher than those of bare metal.

Preparation and characterization of some ruthenium(II) porphyrins containing tertiary phosphine axial ligands, including the crystal structure of (octaethylporphinato)bis(triphenylphosphine)ruthenium(II)

1984 ◽  
Vol 62 (4) ◽  
pp. 755-762 ◽  
Author(s):  
Sara Ariel ◽  
David Dolphin ◽  
George Domazetis ◽  
Brian R. James ◽  
Tak W. Leung ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Phosphine Ligands ◽  
Tertiary Phosphine ◽  
X Ray ◽  
Porphyrin Complex ◽  
H Nmr ◽  
Axial Ligands ◽  
Nmr Data ◽  
Phosphine Complex

The ruthenium(II) porphyrin complex Ru(OEP)(PPh3)2 (OEP = the dianion of octaethylporphyrin) has been prepared from Ru(OEP)(CO)EtOH, and the X-ray crystal structure determined; as expected, the six-coordinate ruthenium is situated in the porphyrin plane and has two axial phosphine ligands. Synthesized also from the carbonyl(ethanol) precursors were the corresponding tris(p-methoxyphenyl)phosphine complex, and the Ru(TPP)L2 (TPP = the dianion of tetraphenylporphyrin, L = PPh3, P(p-CH3OC6H4)3, P″Bu3) and Ru(TPP)(CO)PPh3 complexes. Optical and 1H nmr data are presented for the complexes in solution. In some cases dissociation of a phosphine ligand to generate five-coordinate species occurs and this has been studied quantitatively in toluene at 20 °C for the Ru(OEP)L2 and Ru(TPP)L2 systems.

Sign in / Sign up

Export Citation Format

Share Document