Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

Study of Thermal Oxide Solid-State Reaction on GaAs Surfaces

1991 ◽  
Vol 238 ◽  
Author(s):  
Z. Lu ◽  
D. Chen ◽  
R. M. Osgood ◽  
D. V. Podlesnik
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Photoelectron Spectroscopy ◽  
Interface Reaction ◽  
Decomposition Reaction ◽  
Thermal Reaction ◽  
Native Oxide ◽  
X Ray ◽  
Temperature Range ◽  
Thermal Oxide

ABSTRACTIn this paper, we will present a study of the thermal reaction of AsjOs with GaAs at temperatures below 550°C using monochromatic X-ray photoelectron spectroscopy (MXPS). A solid-state interface reaction of 4GaAs + 3AS2O5 → 2Ga2O3 + 3AS2O3 + 4As, which includes the usual native oxide thermal reaction: 2GaAs + AS2O3 → Ga2O3 + 4As, as well as a decomposition reaction AS2O5 → AS2O3 + O2 is responsible for the thermal reaction in this temperature range.

Layer-by-Layer Oxidation of Silicon

1991 ◽  
Vol 222 ◽  
Author(s):  
T. Yasaka ◽  
M. Takakura ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxidation Rate ◽  
Pure Water ◽  
Oxygen Adsorption ◽  
Native Oxide ◽  
Oxide Growth ◽  
Layer By Layer ◽  
X Ray ◽  
P Type ◽  
Kinetics Of

ABSTRACTGrowth kinetics of native oxide on HF-treated Si surfaces terminated with Si-H bonds has been studied by angle-resolved x-ray photoelectron spectroscopy. The oxide growth rate in pure water for an n+ Si(100) surface is significantly high compared to that of p+, and the n or p type Si oxidation rate is in between. This is explained by the formation of ions through electron transfer from Si to adsorbed O2 molecules and the resulting enhancement of the oxidation rate. The oxide growth on Si(100) is faster than (110) and (111) as interpreted in terms of the steric hindrance for molecular oxygen adsorption on the hydrogen terminated silicon 1×1 surface structures.

Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Native Oxide ◽  
X Ray ◽  
Chemical Treatments ◽  
Chemical Structures ◽  
Native Oxides ◽  
Ft Ir ◽  
Wet Chemical ◽  
Silicon Interface

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

A Two-step Electrodeposition of Pd-Cu/Cu2O Nanocomposite on FTO Substrate for Non-enzymatic Hydrogen Peroxide Sensor

2021 ◽  
Vol 17 ◽  
Author(s):  
Ke Huan ◽  
Li Tang ◽  
Dongmei Deng ◽  
Huan Wang ◽  
Xiaojing Si ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Cyclic Voltammetry ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pd Nanoparticles ◽  
Optimal Conditions ◽  
Potential Oscillation ◽  
X Ray Diffraction ◽  
X Ray

Background: Hydrogen peroxide (H2O2) is a common reagent in the production and living, but excessive H2O2 may enhance the danger to the human body. Consequently, it is very important to develop economical, fast and accurate techniques for detecting H2O2. Methods: A simple two-step electrodeposition process was applied to synthesize Pd-Cu/Cu2O nanocomposite for non-enzymatic H2O2 sensor. Cu/Cu2O nanomaterial was firstly electrodeposited on FTO by potential oscillation technique, and then Pd nanoparticles were electrodeposited on Cu/Cu2O nanomaterial by cyclic voltammetry. The chemical structure, component, and morphology of the synthesized Pd-Cu/Cu2O nanocomposite were characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The electrochemical properties of Pd-Cu/Cu2O nanocomposite were studied by cyclic voltammetry and amperometry. Results: Under optimal conditions, the as-fabricated sensor displayed a broad linear range (5-4000 µM) and low detection limit (1.8 µM) for the determination of H2O2. The proposed sensor showed good selectivity and reproducibility. Meanwhile, the proposed sensor has been successfully applied to detect H2O2 in milk. Conclusion: The Pd-Cu/Cu2O/FTO biosensor exhibits excellent electrochemical activity for H2O2 reduction, which has great potential application in the field of food safety.

Characterization of native oxide film on amorphous Co66Si16B12Fe4Mo2 by X-ray photoelectron spectroscopy

2010 ◽  
Vol 490 (1-2) ◽  
pp. 613-617 ◽  
Author(s):  
Rohit Jain ◽  
Deepika Bhandari ◽  
Anil Dhawan ◽  
S.K. Sharma
Keyword(s):  
Oxide Film ◽  
Photoelectron Spectroscopy ◽  
Native Oxide ◽  
X Ray

scholarly journals Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 295-298 ◽  
Author(s):  
Wen Biao YING ◽  
Yusuke MIZOKAWA ◽  
Yoshitomo KAMIURA ◽  
Yong Bing YU ◽  
Masafumi NISHIMATSU ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Secondary Ion

Segregation of Cu on Etched and Non-Etched Al(Cu) Surface

1998 ◽  
Vol 516 ◽  
Author(s):  
Hua Li ◽  
Karen Maex ◽  
Bert Brijs ◽  
Thierry Conard ◽  
Wilfried Vandervorst ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Native Oxide ◽  
Interface Area ◽  
X Ray ◽  
Origin And Evolution ◽  
Significant Enrichment ◽  
Segregation Phenomenon ◽  
Al Oxide

AbstractIn this paper, we have studied the segregation phenomenon of Cu on the surfaces of patterned lines, dry-etched films and non-etched films, by using X-ray photoelectron spectroscopy and lower energy Rutherford Backscattering Spectrometry. Significant enrichment of Cu is found on the sidewall of the lines. Annealing at 350°C and above cause the disappearance of this enrichment. Origin and evolution of this Cu enrichment have been investigated on films taken out from different steps of the etching process. It has been found that most of the Cu products induced by the plasma etching are CuCl and CuCl2 and they are removed mostly from the top Al oxide layer by the strip process. On the interface area between Al and the native oxide, considerable quantities of etched induced Cu are retained. This Cu is identified to be mainly metallic Cu. Different from the mechanism explained above, thermal annealing can also cause Cu segregation. We have found that Cu atoms diffuse into the native Al oxide where they form Cu2O.

scholarly journals The Preparation and Chemical Structure Analysis of Novel POSS-Based Porous Materials

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1954 ◽  
Author(s):  
Xiaomei Yang ◽  
Guangzhong Yin ◽  
Zhiyong Li ◽  
Pengfei Wu ◽  
Xiaopei Jin ◽  
...  
Keyword(s):  
Porous Materials ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Preparation Method ◽  
X Ray Diffraction ◽  
Related Research ◽  
X Ray ◽  
Advantages And Disadvantages ◽  
Solvent Water ◽  
Oligomeric Silsesquioxane

In this work, we reported the preparation and chemical analysis of novel polyhedral oligomeric silsesquioxane (POSS)-based porous materials, which were prepared according to Friedel-Crafts chloromethylation by using aluminum chloride as the catalyst and dichloromethane as the solvent. Through controlling the treatment solvent (water or methanol) and kinds of POSS, several materials with different morphologies were conveniently obtained. The chemical structure of porous materials was systematically characterized by Fourier-transform infrared (FTIR) spectra, 29Si Nuclear Magnetic Resonance (NMR), 13C NMR, and X-ray photoelectron spectroscopy (XPS). The samples were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and thermogravimetric analysis (TGA) to study their crystallinity, morphology, and thermal properties, respectively. The work systematically demonstrated the chemical structure of the porous materials. Moreover, the advantages and disadvantages of the preparation method and typical properties of the material were evaluated through a comparative analysis with other related research works.

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