Modulating Mechanism of the LSPR and SERS in Ag/ITO Film: Carrier Density Effect

In this work, a novel visible light-driven self-powered photoelectrochemical (PEC) platform was designed based on 3D N-doped graphene hydrogel/hematite nanocomposites (NGH/Fe2O3) via a facile one-pot hydrothermal route.

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Stress and Microstructure Evolution during the Deposition and Crystallization of DCMagnetron Sputter Deposited Amorphous ITO

MRS Proceedings ◽

10.1557/proc-666-f2.5 ◽

2001 ◽

Vol 666 ◽

Author(s):

Hyo-Young Yeom ◽

Courtney Lanier ◽

Eric Chason ◽

David C. Paine

Keyword(s):

Electron Transport ◽

Carrier Density ◽

Room Temperature ◽

Amorphous Structure ◽

Film Stress ◽

Glass Substrates ◽

Ito Film ◽

Partial Pressures ◽

Film Microstructure ◽

Sputter Deposited

ABSTRACTThe deposition of ITO onto glass substrates at room temperature results in a metastable amorphous phase that undergoes crystallization at remarkably low homologous temperatures (T/Tm<0.2). We have evaluated ITO film stress in the as-deposited condition and during crystallization of 200 nm thick films isothermally heated at 250°C. To explore the effect of stoichiometry on the amorphous structure, ITO films were deposited under low, optimum, and high (0, 0.1, and 2 vol %, respectively) oxygen partial pressures. In this report we have correlated changes in stress with changes in the electron transport characteristics (hall mobility and carrier density) and film microstructure.

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Transport and fluctuations in nonlinear-dissipative systems: role of interparticle collisions

Nonlinear Analysis Modelling and Control ◽

10.15388/na.1999.4.0.15249 ◽

1999 ◽

Vol 4 ◽

pp. 31-86 ◽

Cited By ~ 1

Author(s):

R. Katilius ◽

A. Matulionis ◽

R. Raguotis ◽

I. Matulionienė

Keyword(s):

Electric Fields ◽

Carrier Density ◽

Experimental Results ◽

Dissipative Systems ◽

Doped Semiconductors ◽

Electron Diffusion ◽

Electron Collisions ◽

Electric Noise ◽

Diffusion Phenomena

The goal of the paper is to overview contemporary theoretical and experimental research of the microwave electric noise and fluctuations of hot carriers in semiconductors, revealing sensitivity of the noise spectra to non-linearity in the applied electric field strength and, especially, in the carrier density. During the last years, investigation of electronic noise and electron diffusion phenomena in doped semiconductors was in a rapid progress. By combining analytic and Monte Carlo methods as well as the available experimental results on noise, it became possible to obtain the electron diffusion coefficients in the range of electric fields where inter-electron collisions are important and Price’s relation is not necessarily valid. Correspondingly, a special attention to the role of inter-electron collisions and of the non-linearity in the carrier density while shaping electric noise and diffusion phenomena in the non-equilibrium states will be paid. The basic and up-to-date information will be presented on methods and advances in this contemporary field - the field in which methods of non-linear analytic and computational analysis are indispensable while seeking coherent understanding and interpretation of experimental results.

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2D carrier Density Mapping Using SNDM-dC/dV and dC/dz of SiC Power MOSFET

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0494 ◽

2019 ◽

Author(s):

Jing-jiang Yu ◽

T. Yamaoka ◽

T. Aiso ◽

K. Watanabe ◽

Y. Shikakura ◽

...

Keyword(s):

Carrier Density ◽

Environmental Control ◽

Boundary Region ◽

Power Mosfet ◽

Dopant Profiling ◽

Density Mapping ◽

Resolution Observation ◽

Develop Software ◽

20 Nm ◽

High Resolution Observation

Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power MOSFET. Furthermore, they develop software that combines dC/dV and dC/dz images and expresses both density and polarity in a single distribution image. The discussion provides the details of AFM experiments that were conducted using a Hitachi environmental control AFM5300E system. The results indicated that the carrier density decreases in the boundary region between n plus source and p body. The authors conclude that although the resolutions of dC/dV and dC/dz are estimated to be 20 nm or less and 30 nm or less, respectively, there is a possibility that the resolution can be further improved by using a sharpened probe.

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Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0018 ◽

2011 ◽

Author(s):

Guillaume Celi ◽

Sylvain Dudit ◽

Thierry Parrassin ◽

Philippe Perdu ◽

Antoine Reverdy ◽

...

Keyword(s):

Charge Carrier ◽

Laser Beam ◽

Integrated Circuit ◽

Carrier Density ◽

Deep Submicron ◽

Charge Carrier Density ◽

Voltage Imaging ◽

A New Technique ◽

Scan Chain

Abstract For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated circuit. In this paper, we propose a new technique based on the LVI technique to debug a scan chain related issue. We describe the method to use LVI, usually dedicated to frequency mapping of digital active parts, in a way that enables localization of resistive leakage. Origin of this signal is investigated on a 40nm case study. This signal can be properly understood when two different effects, charge carrier density variations (LVI) and thermo reflectance effect (Thermal Frequency Imaging, TFI), are taken into account.

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