Resistance Switching Behavior of a Perhydropolysilazane-Derived SiOx-Based Memristor

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

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Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices

Applied Physics Letters ◽

10.1063/1.4726084 ◽

2012 ◽

Vol 100 (23) ◽

pp. 231603 ◽

Cited By ~ 37

Author(s):

Rui Yang ◽

Kazuya Terabe ◽

Tohru Tsuruoka ◽

Tsuyoshi Hasegawa ◽

Masakazu Aono

Keyword(s):

Resistance Switching ◽

Switching Behavior ◽

Migration Process ◽

Oxygen Migration ◽

Bipolar Resistance Switching

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Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

10.20944/preprints202009.0499.v1 ◽

2020 ◽

Author(s):

Jing Wang ◽

Bailey Bedford ◽

Chanle Chen ◽

Ludi Miao ◽

Binghcheng Luo

Keyword(s):

Thin Film ◽

Oxygen Vacancy ◽

Excitation Energy ◽

Ultraviolet Light ◽

Light Response ◽

Resistance Switching ◽

The State ◽

Switching Behavior ◽

Memory Devices ◽

Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

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MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

Modern Physics Letters B ◽

10.1142/s0217984913500747 ◽

2013 ◽

Vol 27 (11) ◽

pp. 1350074 ◽

Cited By ~ 4

Author(s):

YU-LING JIN ◽

ZHONG-TANG XU ◽

KUI-JUAN JIN ◽

CHEN GE ◽

HUI-BIN LU ◽

...

Keyword(s):

Oxygen Vacancy ◽

Oxygen Vacancies ◽

Vacancy Concentration ◽

Resistance Switching ◽

Switching Behavior ◽

Oxygen Vacancy Concentration ◽

Mechanism Study ◽

Switching Performance ◽

Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

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Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

Physical Chemistry Chemical Physics ◽

10.1039/d0cp00124d ◽

2020 ◽

Vol 22 (23) ◽

pp. 13277-13284

Author(s):

Wanchao Zheng ◽

Yuchen Wang ◽

Chao Jin ◽

Ruihua Yin ◽

Dong Li ◽

...

Keyword(s):

Resistive Switching ◽

Resistance Switching ◽

Depletion Layer ◽

Switching Behavior ◽

Ferroelectric Polarization ◽

Resistive Switching Behavior ◽

Layer Width ◽

Depletion Layer Width

The resistive switching behavior in the Pt/Fe/BiFeO3/SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3/SrRuO3 interface.

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Effect of Annealing Temperature on Resistance Switching Behavior of Bi4Ti3O12 Thin Films Deposited on ITO Glass

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.706-708.82 ◽

2013 ◽

Vol 706-708 ◽

pp. 82-84

Author(s):

Bing Cheng Sun ◽

Hua Wang ◽

Ji Wen Xu

Keyword(s):

Thin Films ◽

High Resistance ◽

Annealing Temperature ◽

Resistance Switching ◽

Switching Behavior ◽

Space Charge Limited Current ◽

Ohmic Behavior ◽

Conduction Mechanisms ◽

Ito Glass ◽

Solgel Method

Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by solgel method were studied, and the effect of annealing temperature on resistance switching behavior has been studied. The main point is accented on decrease the operation voltage. Two controllable resistance states were observed by applying voltage pulses. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Space Charge Limited Current(SCLC).

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