Unveiling Structurally Engineered Carrier Dynamics in Hybrid Quasi-Two-Dimensional Perovskite Thin Films toward Controllable Emission

2017 ◽  
Vol 8 (18) ◽  
pp. 4431-4438 ◽  
Author(s):  
Qiuyu Shang ◽  
Yunuan Wang ◽  
Yangguang Zhong ◽  
Yang Mi ◽  
Liang Qin ◽  
...  
Author(s):  
Chaochao Qin ◽  
Liu-Hong Xu ◽  
Zhongpo Zhou ◽  
Jian Song ◽  
Shu-Hong Ma ◽  
...  

Quasi-two dimensional perovskites have emerged as candidates of high-performance materials for various optoelectronic applications due to the unique excitonic properties in their multilayer structures. Both Dion–Jacobson perovskites and Ruddlesden-Popper phases...


2021 ◽  
pp. 2100193
Author(s):  
Peng Liu ◽  
Bingqian Zhang ◽  
Qing Liao ◽  
Guifen Tian ◽  
Chunling Gu ◽  
...  

2021 ◽  
Author(s):  
Arindam Mondal ◽  
Akash Lata ◽  
Aarya Prabhakaran ◽  
Satyajit Gupta

Application of three-dimensional (3D)-halide perovskites (HaP) in photocatalysis encourages the new exercise with two-dimensional (2D) HaP based thin-films for photocatalytic degradation of dye. The reduced dimensionality to 2D-HaPs, with a...


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejian Ma ◽  
Fei Zhang ◽  
Zhaodong Chu ◽  
Ji Hao ◽  
Xihan Chen ◽  
...  

AbstractThe outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 μs and 10 μs correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3~5 μm) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.


Author(s):  
Chong Liu ◽  
Chao-Sheng Lian ◽  
Meng-Han Liao ◽  
Yang Wang ◽  
Yong Zhong ◽  
...  

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Yiyue Zhang ◽  
Masoumeh Keshavarz ◽  
Elke Debroye ◽  
Eduard Fron ◽  
Miriam Candelaria Rodríguez González ◽  
...  

Abstract Lead halide perovskites have attracted tremendous attention in photovoltaics due to their impressive optoelectronic properties. However, the poor stability of perovskite-based devices remains a bottleneck for further commercial development. Two-dimensional perovskites have great potential in optoelectronic devices, as they are much more stable than their three-dimensional counterparts and rapidly catching up in performance. Herein, we demonstrate high-quality two-dimensional novel perovskite thin films with alternating cations in the interlayer space. This innovative perovskite provides highly stable semiconductor thin films for efficient near-infrared light-emitting diodes (LEDs). Highly efficient LEDs with tunable emission wavelengths from 680 to 770 nm along with excellent operational stability are demonstrated by varying the thickness of the interlayer spacer cation. Furthermore, the best-performing device exhibits an external quantum efficiency of 3.4% at a high current density (J) of 249 mA/cm2 and remains above 2.5% for a J up to 720 mA cm−2, leading to a high radiance of 77.5 W/Sr m2 when driven at 6 V. The same device also shows impressive operational stability, retaining almost 80% of its initial performance after operating at 20 mA/cm2 for 350 min. This work provides fundamental evidence that this novel alternating interlayer cation 2D perovskite can be a promising and stable photonic emitter.


2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.


2016 ◽  
Vol 120 (30) ◽  
pp. 17069-17080 ◽  
Author(s):  
Randy D. Mehlenbacher ◽  
Thomas J. McDonough ◽  
Nicholas M. Kearns ◽  
Matthew J. Shea ◽  
Yongho Joo ◽  
...  

1994 ◽  
Vol 361 ◽  
Author(s):  
V.A. Alyoshin ◽  
E.V. Sviridov ◽  
V.I.M. Hukhortov ◽  
I.H. Zakharchenko ◽  
V.P. Dudkevich

ABSTRACTSurface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)TiO3 films rf-sputtered on (001) HgO crystal cle-avage surface versus the oxygen worKing gas pressure P and subst-rate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. The deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.


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