Carrier dynamics in two-dimensional perovskites: Dion-Jacobson vs. Ruddlesden-Popper thin films

2022 ◽  
Author(s):  
Chaochao Qin ◽  
Liu-Hong Xu ◽  
Zhongpo Zhou ◽  
Jian Song ◽  
Shu-Hong Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Carrier Dynamics ◽  
Multilayer Structures ◽  
Two Dimensional ◽  
Optoelectronic Applications ◽  
Excitonic Properties

Quasi-two dimensional perovskites have emerged as candidates of high-performance materials for various optoelectronic applications due to the unique excitonic properties in their multilayer structures. Both Dion–Jacobson perovskites and Ruddlesden-Popper phases...

scholarly journals Two-dimensional monoelemental germanene nanosheets: facile preparation and optoelectronic applications

2020 ◽  
Vol 8 (46) ◽  
pp. 16318-16325
Author(s):  
Chao Li ◽  
Jianlong Kang ◽  
Jianlei Xie ◽  
Yingwei Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Liquid Phase ◽  
High Performance ◽  
Electrode Materials ◽  
Two Dimensional ◽  
Facile Preparation ◽  
Optoelectronic Applications ◽  
Self Powered

Few-layer 2D germanium nanosheets (GeNS) are obtained via a facile liquid-phase exfoliated method and fabricated as electrode materials to assemble self-powered high performance photo-electrochemical (PEC) type photodetectors.

Unveiling Structurally Engineered Carrier Dynamics in Hybrid Quasi-Two-Dimensional Perovskite Thin Films toward Controllable Emission

2017 ◽  
Vol 8 (18) ◽  
pp. 4431-4438 ◽  
Author(s):  
Qiuyu Shang ◽  
Yunuan Wang ◽  
Yangguang Zhong ◽  
Yang Mi ◽  
Liang Qin ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Dynamics ◽  
Two Dimensional

scholarly journals Single Source Thermal Evaporation of Two-dimensional Perovskite Thin Films for Photovoltaic Applications

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Hua-Bin Lan ◽  
Zheng-Hua Su ◽  
Huan-Xin Peng ◽  
Jing-Ting Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
High Performance ◽  
Thermal Evaporation ◽  
Perovskite Solar Cells ◽  
Two Dimensional ◽  
Single Source ◽  
Solvent Annealing ◽  
Solvent Vapor

AbstractHybrid two-dimensional (2D) halide perovskites has been widely studied due to its potential application for high performance perovskite solar cells. Understanding the relationship between microstructural and opto-electronic properties is very important for fabricating high-performance 2D perovskite solar cell. In this work, the effect of solvent annealing on grain growth was investigated to enhance the efficiency of photovoltaic devices with 2D perovskite films based on (BA)2(MA)3Pb4I13 prepared by single-source thermal evaporation. Results show that solvent annealing with the introduction of solvent vapor can effectively enhance the crystallization of the (BA)2(MA)3Pb4I13 thin films and produce denser, larger-crystal grains. The thin films also display a favorable band gap of 1.896 eV, which benefits for increasing the charge-diffusion lengths. The solvent-annealed (BA)2(MA)3Pb4I13 thin-film solar cell prepared by single-source thermal evaporation shows an efficiency range of 2.54–4.67%. Thus, the proposed method can be used to prepare efficient large-area 2D perovskite solar cells.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

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