Investigation of the Internal Chemical Composition of Chitosan-Based LbL Films by Depth-Profiling X-ray Photoelectron Spectroscopy (XPS) Analysis

Langmuir ◽  
2018 ◽  
Vol 34 (4) ◽  
pp. 1429-1440 ◽  
Author(s):  
Thiago B. Taketa ◽  
Danilo M. dos Santos ◽  
Anderson Fiamingo ◽  
Juliana M. Vaz ◽  
Marisa M. Beppu ◽  
...  

2018 ◽  
Vol 122 (26) ◽  
pp. 14889-14897 ◽  
Author(s):  
Irene Papagiannouli ◽  
Minna Patanen ◽  
Valérie Blanchet ◽  
John D. Bozek ◽  
Manuel de Anda Villa ◽  
...  


1988 ◽  
Vol 127 ◽  
Author(s):  
M. P. Lahalle ◽  
J. C. Krupa ◽  
R. Guillaumont ◽  
M. Genet ◽  
G. C. Allen ◽  
...  

ABSTRACTX-rays photoelectron spectroscopy (XPS) analysis has been carried out on uranium dioxide single crystals placed in both deionised or mineral water at 60 °C and 90 °C for a few months. The surface layer on the sample immersed in mineral water at 90 °C was sufficiently thick to mask the presence of uranium in the recorded XPS spectrum. Depth profiling experiments showed that the deposit was ∼ 100 nm in thickness and revealed the formation of a mixed magnesium-uranium oxide region between the bulk UO2 and the outer magnesium- rich layer. Analysis of the aqueous medium following immersion of the UO2 samples showed that the concentration of uranium released to the mineral water was 10 to 100 times lower than that in deionised water.





2001 ◽  
Vol 707 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu

ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.



2017 ◽  
Vol 373 ◽  
pp. 313-316 ◽  
Author(s):  
Samantha Zimnik ◽  
Christian Piochacz ◽  
Sebastian Vohburger ◽  
Christoph Hugenschmidt

We report on time-dependent Positron annihilation induced Auger Electron Spectroscopy (PAES) study on 0.5 monolayers (ML) Ni on polycrystalline Pd accompanied by complementary X-ray induced Photoelectron Spectroscopy (XPS). The normalized PAES spectra showed a significant decrease in the Ni intensity and an increase in the Pd intensity as a function of time. To rule out varying influence on the elements e.g. from surface contaminates due to the residual gas, a time-dependent XPS analysis was performed on pure Ni and Pd as well as to analyze the main contaminants C and O. The O fraction was found to be constant within the measurement time and the time constants for C significantly differ from those of Ni and Pd in the PAES data. Consequently, it was concluded that the PAES data show a superposition of C contamination and structural changes at the surface of Ni/Pd.



1989 ◽  
Vol 159 ◽  
Author(s):  
E.D. Richmond

ABSTRACTFor the first time the (1102) surface of sapphire has been investigated by X-ray photoelectron spectroscopy to ascertain chemical changes resulting from annealing in vacuum at 1300° C and 1450° C. As received substrates had a substantial surface C contaminant. For substrates that were chemically cleaned before inserting them into the MBE system no trace of carbon is detected. A residual flourine contaminant results from the cleaning procedure and is desorbed by the vacuum annealing. Spectra of annealed substrates are compared to the unannealed chemically cleaned substrates. The annealed substrates exhibit 0.4 to 0.5 eV shift to higher binding energy of the Al peak and a 0.3 eV shift to higher binding energy of the O peak. In addition, a 2% depletion of oxygen from the surface occurs.



1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.



2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.



2020 ◽  
Vol 8 ◽  
Author(s):  
Liqing Li ◽  
Lin Yang ◽  
Fangxu Li

A novel collector of 1-(2-hydroxyphenyl) dec-2-en-1-one oxime (HPDO) was synthesized from 2-hydroxy acetophenone and octanal, and its flotation and adsorption behavior for malachite were studied by flotation tests and x-ray photoelectron spectroscopy (XPS) analysis. The flotation results of a single mineral show HPDO is a special collector for malachite. Compared with benzohydroxamic acid (BHA), isobutyl xanthate (SIBX), and dodecylamine (DA), HPDO exhibits excellent flotation performance for malachite and satisfied selectivity against quartz and calcite over a wide pH range. The HPDO with a concentration of 200 mg/L can float 94% malachite at pH 8, while only recovering 7.8% quartz and 28% calcite. XPS data give clear evidence for the formation of a Cu-oxime complex on malachite surfaces after HPDO adsorption.



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