Integrated In-Sensor Computing Optoelectronic Device for Environment-Adaptable Artificial Retina Perception Application

Nano Letters ◽  
2021 ◽  
Author(s):  
Jialin Meng ◽  
Tianyu Wang ◽  
Hao Zhu ◽  
Li Ji ◽  
Wenzhong Bao ◽  
...  
Keyword(s):  
Optoelectronic Device ◽  
Artificial Retina

scholarly journals Colour-sensitive conjugated polymer inkjet-printed pixelated artificial retina model studied via a bio-hybrid photovoltaic device

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Manuela Ciocca ◽  
Pavlos Giannakou ◽  
Paolo Mariani ◽  
Lucio Cinà ◽  
Aldo Di Carlo ◽  
...  
Keyword(s):  
Electronic Materials ◽  
Optoelectronic Device ◽  
Organic Polymer ◽  
Artificial Retina ◽  
Polymer Semiconductors ◽  
Promising Tool ◽  
Organic Electronic Materials ◽  
Light Stimuli ◽  
Photo Response

AbstractIn recent years, organic electronic materials have been shown to be a promising tool, even transplanted in vivo, for transducing light stimuli to non-functioning retinas. Here we developed a bio-hybrid optoelectronic device consisting of patterned organic polymer semiconductors interfaced with an electrolyte solution in a closed sandwich architecture in order to study the photo-response of photosensitive semiconducting layers or patterns in an environment imitating biological extracellular fluids. We demonstrate an artificial retina model composed of on an array of 42,100 pixels made of three different conjugated polymers via inkjet printing with 110 pixels/mm2 packing density. Photo-sensing through three-colour pixelation allows to resolve incoming light spectrally and spatially. The compact colour sensitive optoelectronic device represents an easy-to-handle photosensitive platform for the study of the photo response of artificial retina systems.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139 ◽  
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

ε-InSe single crystals grown by a horizontal gradient freeze method

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7864-7869
Author(s):  
Maojun Sun ◽  
Wei Wang ◽  
Qinghua Zhao ◽  
Xuetao Gan ◽  
Yuanhui Sun ◽  
...  
Keyword(s):  
Single Crystals ◽  
Optoelectronic Device ◽  
Indium Selenide ◽  
Horizontal Gradient ◽  
Device Applications

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

Discotic columnar liquid-crystalline polymer semiconducting materials with high charge-carrier mobility via rational macromolecular engineering

2017 ◽  
Vol 8 (21) ◽  
pp. 3286-3293 ◽  
Author(s):  
Bin Mu ◽  
Xingtian Hao ◽  
Jian Chen ◽  
Qian Li ◽  
Chunxiu Zhang ◽  
...  
Keyword(s):  
Liquid Crystalline ◽  
Cost Effective ◽  
Crystalline Polymer ◽  
Charge Carrier Mobility ◽  
Optoelectronic Device ◽  
Side Chain ◽  
Liquid Crystal Polymers ◽  
Semiconducting Materials ◽  
Organic Semiconducting Materials ◽  
Device Applications

Well-prepared side-chain discotic liquid crystal polymers with shorter spacers in ordered columnar phases are fascinating and promising cost-effective, solution-processable organic semiconducting materials for various potential optoelectronic device applications.

Optical Properties of Zinc Sulphide Thin Films Coated with Aqueous Organic Dye Extract for Solar and Optoelectronic Device Applications

2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Dye ◽  
Device Applications

scholarly journals All-inorganic perovskite quantum dot light-emitting memories

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Meng-Cheng Yen ◽  
Chia-Jung Lee ◽  
Kang-Hsiang Liu ◽  
Yi Peng ◽  
Junfu Leng ◽  
...  
Keyword(s):  
Random Access ◽  
Optoelectronic Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Emission Color ◽  
Perovskite Quantum Dots ◽  
In Series ◽  
First Time

AbstractField-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-emitting electrochemical cell (LEC), or vice versa, by simply modulating its bias polarity. We then realize for the first time a fast, all-perovskite light-emitting memory (LEM) operating at 5 kHz by pairing such two identical devices in series, in which one functions as an RRAM to electrically read the encoded data while the other simultaneously as an LEC for a parallel, non-contact optical reading. We further show that the digital status of the LEM can be perceived in real time from its emission color. Our work opens up a completely new horizon for more advanced all-inorganic perovskite optoelectronic technologies.

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