scholarly journals Aberration-Corrected Electron Beam Lithography at the One Nanometer Length Scale

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4562-4567 ◽  
Author(s):  
Vitor R. Manfrinato ◽  
Aaron Stein ◽  
Lihua Zhang ◽  
Chang-Yong Nam ◽  
Kevin G. Yager ◽  
...  
2019 ◽  
Vol 29 (52) ◽  
pp. 1903429 ◽  
Author(s):  
Vitor R. Manfrinato ◽  
Fernando E. Camino ◽  
Aaron Stein ◽  
Lihua Zhang ◽  
Ming Lu ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 666
Author(s):  
Naomi Mizuno ◽  
Fernando Camino ◽  
Xu Du

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.


1989 ◽  
Vol 174 ◽  
Author(s):  
Kenneth Douglas ◽  
Noel A. Clark ◽  
Kenneth J. Rothschild

Parallel nanometer molecular lithography has recently been demonstrated to be a parallel fabrication process for structures with features defined by single molecules [1]. In this process two dimensional (2d) monolayer protein crystals are used as patterning elements in the parallel fabrication of structures on the 10nm length scale (nanostructures). The parallelism of this technique is in contrast to such serial fabrication methods as x-ray and electron-beam lithography.


Author(s):  
L. D. Jackel

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.


2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexander Goncharsky ◽  
Anton Goncharsky ◽  
Dmitry Melnik ◽  
Svyatoslav Durlevich

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.


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