Two-Step Process using MOCVD and Thermal Oxidation to Obtain Pure-Phase Cu2O Thin Films Transistors

2021 ◽  
Author(s):  
Vivek Singh ◽  
Jyoti Sinha ◽  
Sushobhan Avasthi
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Step Process ◽  
Pure Phase ◽  
Cu2o Thin Films

scholarly journals Effect of Annealing Temperature on Cu2O Thin Films Prepared by Thermal Oxidation Method

2020 ◽  
Vol 36 (2) ◽  
Author(s):  
Tran Thi Ha ◽  
Nguyen Thi Huyen Trang ◽  
Bach Thanh Cong ◽  
Nguyen Thi Dieu Thu ◽  
Nguyen Thanh Binh ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Annealing Temperature ◽  
Reflectance Spectroscopy ◽  
Phase Identification ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Oxidation Method ◽  
X Ray ◽  
Cu2o Thin Films

We report a facile process to fabricate cuprous thin films by thermal oxidation of copper substrates. Structure and phase identification were studied by X-ray diffraction measurement and Raman spectroscopy. Scanning electron microscopy was utilized to study surface morphology of the as-fabricated thin films and optical properties of the samples were investigated by diffused reflectance spectroscopy. The study shows that cuprous thin films could be obtained by controlling annealing temperature in the region of 200-300 oC.

Preferential Orientation of Photochromic Gadolinium Oxyhydrides

2020 ◽  
Author(s):  
Elbruz Murat Baba ◽  
Jose Montero ◽  
Dmitrii Moldarev ◽  
Marcos V. Moro ◽  
Max Wolff ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rare Earth ◽  
Preferential Orientation ◽  
Reactive Magnetron ◽  
Flow Ratio ◽  
Deposition Pressure ◽  
Step Process ◽  
Oxidation In Air ◽  
Key Parameter

<p>We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH<sub>2-x</sub>) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations, and photochromic response of the films are strongly dependent on the deposition pressure. GdHO films show preferential orientation along the [100] direction and exhibit photochromism when synthesized at deposition pressures up to 5.8 Pa and. The photochromic contrast is larger than 20 % when the films are deposited below 2.8 Pa with 0.22 H<sub>2</sub>/Ar flow ratio. We argue that the degree of preferential orientation defines the oxygen concentration which is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above are explained by the oxidation-induced decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas. </p>

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

Surface engineering of electrodeposited cuprous oxide (Cu2O) thin films: effect on hydrophobicity and LP gas sensing

2021 ◽  
pp. 150020
Author(s):  
K.N.D. Bandara ◽  
K.M.D.C. Jayathilaka ◽  
D.P. Dissanayake ◽  
J.K.D.S. Jayanetti
Keyword(s):  
Thin Films ◽  
Cuprous Oxide ◽  
Surface Engineering ◽  
Gas Sensing ◽  
Cu2o Thin Films

Nitrogen Doping into Cu2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2765-2768 ◽  
Author(s):  
Shogo Ishizuka ◽  
Shinya Kato ◽  
Takahiro Maruyama ◽  
Katsuhiro Akimoto
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nitrogen Doping ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Cu2o Thin Films

scholarly journals Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

2015 ◽  
Vol 213 (2) ◽  
pp. 470-480 ◽  
Author(s):  
Loïc Baggetto ◽  
Cédric Charvillat ◽  
Yannick Thébault ◽  
Jérôme Esvan ◽  
Marie-Christine Lafont ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Barrier Properties ◽  
Interfacial Chemistry ◽  
Amorphous Alumina

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Controlled growth of Cu2O thin films by electrodeposition approach

2017 ◽  
Vol 63 ◽  
pp. 203-211 ◽  
Author(s):  
Md. Anower Hossain ◽  
Rashad Al-Gaashani ◽  
Hicham Hamoudi ◽  
Mohammed J. Al Marri ◽  
Ibnelwaleed A. Hussein ◽  
...  
Keyword(s):  
Thin Films ◽  
Controlled Growth ◽  
Cu2o Thin Films
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