High-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistors

2020 ◽  
Vol 12 (40) ◽  
pp. 44926-44933
Author(s):  
Pavan Pujar ◽  
Kishor Kumar Madaravalli Jagadeeshkumar ◽  
Muhammad Naqi ◽  
Srinivas Gandla ◽  
Hae Won Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Intensity ◽  
Zirconium Oxide ◽  
Thin Film Transistors ◽  
High Intensity Ultrasound ◽  
Ultrasound Assisted ◽  
Lanthanum Zirconium Oxide

Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric

2013 ◽  
Vol 5 (2) ◽  
pp. 410-417 ◽  
Author(s):  
Jee Ho Park ◽  
Young Bum Yoo ◽  
Keun Ho Lee ◽  
Woo Soon Jang ◽  
Jin Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Zirconium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Solution Processed

Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

2016 ◽  
Vol 4 (45) ◽  
pp. 10715-10721 ◽  
Author(s):  
Chundan Zhu ◽  
Ao Liu ◽  
Guoxia Liu ◽  
Guixia Jiang ◽  
You Meng ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Zirconium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
High K ◽  
Metal Oxide Thin Film ◽  
P Type

High-performance n- and p-type metal-oxide thin-film transistors are fabricated on ZrOx high-k dielectrics via a nontoxic water-inducement method.

Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

2021 ◽  
Vol 723 ◽  
pp. 138594
Author(s):  
Qian Zhang ◽  
Cheng Ruan ◽  
Guodong Xia ◽  
Hongyu Gong ◽  
Sumei Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Temperature Solution

Approaches to label-free flexible DNA biosensors using low-temperature solution-processed InZnO thin-film transistors

2014 ◽  
Vol 55 ◽  
pp. 99-105 ◽  
Author(s):  
Joohye Jung ◽  
Si Joon Kim ◽  
Keun Woo Lee ◽  
Doo Hyun Yoon ◽  
Yeong-gyu Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Label Free ◽  
Dna Biosensors ◽  
Solution Processed ◽  
Temperature Solution

Precursor design and engineering for low-temperature deposition of gate dielectrics for thin film transistors

2011 ◽  
Vol 1287 ◽  
Author(s):  
Anupama Mallikarjunan ◽  
Laura M Matz ◽  
Andrew D Johnson ◽  
Raymond N Vrtis ◽  
Manchao Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Process Conditions ◽  
Structure Property ◽  
Oh Groups

ABSTRACTThe electrical and physical quality of gate and passivation dielectrics significantly impacts the device performance of thin film transistors (TFTs). The passivation dielectric also needs to act as a barrier to protect the TFT device. As low temperature TFT processing becomes a requirement for novel applications and plastic substrates, there is a need for materials innovation that enables high quality plasma enhanced chemical vapor deposition (PECVD) gate dielectric deposition. In this context, this paper discusses structure-property relationships and strategies for precursor development in silicon nitride, silicon oxycarbide (SiOC) and silicon oxide films. Experiments with passivation SiOC films demonstrate the benefit of a superior precursor (LkB-500) and standard process optimization to enable lower temperature depositions. For gate SiO2 deposition (that are used with polysilicon TFTs for example), organosilicon precursors containing different types and amounts of Si, C, O and H bonding were experimentally compared to the industry standard TEOS (tetraethoxysilane) at different process conditions and temperatures. Major differences were identified in film quality especially wet etch rate or WER (correlating to film density) and dielectric constant (k) values (correlating to moisture absorption). Gate quality SiO2 films can be deposited by choosing precursors that can minimize residual Si-OH groups and enable higher density stable moisture-free films. For e.g., the optimized precursor AP-LTO® 770 is clearly better than TEOS for low temperature PECVD depositions based on density, WER, k charge density (measured by flatband voltage or Vfb); and leakage and breakdown voltage (Vbd) measurements. The design and development of such novel precursors is a key factor to successfully enable manufacturing of advanced low temperature processed devices.

scholarly journals Sol–Gel PMMA–ZrO2 Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

ACS Omega ◽  
2017 ◽  
Vol 2 (10) ◽  
pp. 6968-6974 ◽  
Author(s):  
Clemente G. Alvarado-Beltrán ◽  
Jorge L. Almaral-Sánchez ◽  
Israel Mejia ◽  
Manuel A. Quevedo-López ◽  
Rafael Ramirez-Bon
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Sol Gel ◽  
Hybrid Layers
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