Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS2 Matrix

2021 ◽  
Author(s):  
Xuewen Wang ◽  
Bolun Wang ◽  
Yonghuang Wu ◽  
Enze Wang ◽  
Hao Luo ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Selective Reaction

scholarly journals Fast response photogating in monolayer MoS2 phototransistors

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Vaquero ◽  
Vito Clericò ◽  
Juan Salvador-Sanchez ◽  
Elena Díaz ◽  
Francisco Dominguez-Adame ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fast Response ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Intensive Research

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by...

Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3

2019 ◽  
Vol 114 (17) ◽  
pp. 171601 ◽  
Author(s):  
Maokun Wu ◽  
Pan Liu ◽  
Baojuan Xin ◽  
Luyan Li ◽  
Hong Dong ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Carrier Doping

scholarly journals A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han
Keyword(s):  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Image Force ◽  
Drain Current ◽  
Equivalent Model ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

scholarly journals Novel Plasmonic Modes of Monolayer MoS$_2$ in the Presence of Spin-Orbit Interactions

2018 ◽  
Author(s):  
Z.H. Tao ◽  
H.M. Dong ◽  
Y.F. Duan ◽  
F. Huang
Keyword(s):  
Random Phase Approximation ◽  
Theoretical Study ◽  
Random Phase ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Spin Polarizability ◽  
Terahertz Devices ◽  
Spin Orbit Interactions ◽  
Plasmon Modes

We investigate on the plasmons of monolayer MoS2 in the presence of spin-orbit interactions (SOIs) under the random phase approximation. The theoretical study shows that two new and novel plasmonic modes can be achieved via inter spin sub-band transitions around the Fermi level duo to the SOIs. The plasmon modes are optic-like, which are very different from the plasmon modes reported recently in monolayer MoS2, and the other two-dimensional systems. The frequency of such plasmons increases with the increasing of the electron density or the spin polarizability, and decreases with the increasing of the wave vectors q. Our results exhibit some interesting features which can be utilized to the plasmonic and terahertz devices based on monolayer MoS2.

scholarly journals Difference frequency generation in monolayer MoS2

Nanoscale ◽  
2020 ◽  
Vol 12 (38) ◽  
pp. 19638-19643
Author(s):  
Yadong Wang ◽  
Masood Ghotbi ◽  
Susobhan Das ◽  
Yunyun Dai ◽  
Shisheng Li ◽  
...  
Keyword(s):  
Difference Frequency Generation ◽  
Layered Materials ◽  
Difference Frequency ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Parametric Generation ◽  
Optical Parametric ◽  
Optical Parametric Generation ◽  
Frequency Generation

We have demonstrated broadband difference frequency generation with monolayer MoS2, showing possibility of using two-dimensional layered materials for optical parametric generation, amplification and oscillation.

scholarly journals Direct Observation of Monolayer MoS2 Prepared by CVD Using In-Situ Differential Reflectance Spectroscopy

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1640 ◽  
Author(s):  
Yina Wang ◽  
Lei Zhang ◽  
Chenhui Su ◽  
Hang Xiao ◽  
Shanshan Lv ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Reflectance Spectroscopy ◽  
Ex Situ ◽  
In Situ Observation ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Metal Dichalcogenides

The in-situ observation is of great significance to the study of the growth mechanism and controllability of two-dimensional transition metal dichalcogenides (TMDCs). Here, the differential reflectance spectroscopy (DRS) was performed to monitor the growth of molybdenum disulfide (MoS2) on a SiO2/Si substrate prepared by chemical vapor deposition (CVD). A home-built in-situ DRS setup was applied to monitor the growth of MoS2 in-situ. The formation and evolution of monolayer MoS2 are revealed by differential reflectance (DR) spectra. The morphology, vibration mode, absorption characteristics and thickness of monolayer MoS2 have been confirmed by optical microscopy, Raman spectroscopy, ex-situ DR spectra, and atomic force microscopy (AFM) respectively. The results demonstrated that DRS was a powerful tool for in-situ observations and has great potential for growth mechanism and controllability of TMDCs prepared by CVD. To the best of the authors’ knowledge, it was the first report in which the CVD growth of two-dimensional TMDCs has been investigated in-situ by reflectance spectroscopy.

scholarly journals Wafer-Scale Synthesis of Monolayer MoS2 and Their Field-Effect Transistors toward Practical Applications

2021 ◽  
Author(s):  
Yuchun Liu ◽  
Fuxing Gu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Properties ◽  
Dimensional Structure ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Promising Candidate ◽  
Practical Applications ◽  
Integrated Electronics ◽  
Considerable Research

Molybdenum disulfide (MoS2) have attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physic-chemical properties. However, it is still...

scholarly journals Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Soohyung Park ◽  
Thorsten Schultz ◽  
Xiaomin Xu ◽  
Berthold Wegner ◽  
Areej Aljarb ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Photoelectron Spectroscopy ◽  
Electronic Devices ◽  
Electronic Coupling ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
X Ray ◽  
Molecular Electron ◽  
Transfer Mechanisms

Abstract Tuning the Fermi level (EF) in two-dimensional transition metal dichalcogenide (TMDC) semiconductors is crucial for optimizing their application in (opto-)electronic devices. Doping by molecular electron acceptors and donors has been suggested as a promising method to achieve EF-adjustment. Here, we demonstrate that the charge transfer (CT) mechanism between TMDC and molecular dopant depends critically on the electrical nature of the substrate as well as its electronic coupling with the TMDC. Using angle-resolved ultraviolet and X-ray photoelectron spectroscopy, we reveal three fundamentally different, substrate-dependent CT mechanisms between the molecular electron acceptor 1,3,4,5,7,8-hexafluoro-tetracyano-naphthoquinodimethane (F6TCNNQ) and a MoS2 monolayer. Our results demonstrate that any substrate that acts as charge reservoir for dopant molecules can prohibit factual doping of a TMDC monolayer. On the other hand, the three different CT mechanisms can be exploited for the design of advanced heterostructures, exhibiting tailored electronic properties in (opto-)electronic devices based on two-dimensional semiconductors.

Gate-tunable trion binding energy in monolayer MoS2 with plasmonic superlattice

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17754-17761
Author(s):  
Zhuang Luo ◽  
Hao Jia ◽  
Liu Lv ◽  
Quan Wang ◽  
Xiaohong Yan
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
The World ◽  
Metal Dichalcogenides ◽  
Physical And Chemical ◽  
And Chemical Properties

Two-dimensional transition metal dichalcogenides exhibit promising potential and attract the attention of the world in the application of optoelectronic devices owing to their distinctive physical and chemical properties.

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