Pt/(InGa)2O3/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

2021 ◽  
Author(s):  
Zhao Wang ◽  
Wei Zheng ◽  
Qichang Hu ◽  
Shiyan Lin ◽  
Yibing Wu ◽  
...  
Keyword(s):  
Photovoltaic Detectors ◽  
Solar Blind

Highly selective ozone-treated β-Ga2O3 solar-blind deep-UV photodetectors

2020 ◽  
Vol 117 (26) ◽  
pp. 261101
Author(s):  
Suhyun Kim ◽  
Jihyun Kim
Keyword(s):  
Uv Photodetectors ◽  
Solar Blind ◽  
Deep Uv

High-Responsivity Solar-Blind Ultraviolet Photodetectors Based on Carbon Nanodots/Graphene Hybrids

2021 ◽  
Vol 68 (3) ◽  
pp. 1101-1106
Author(s):  
Yong Fang ◽  
Zhiwei Zhao ◽  
Mengru Zhu ◽  
Zhengjin Weng ◽  
Chao Fang ◽  
...  
Keyword(s):  
Carbon Nanodots ◽  
High Responsivity ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

High-Responsivity Solar-Blind Photodetector Based on $ \hbox{Mg}_{0.46}\hbox{Zn}_{0.54}\hbox{O}$ Thin Film

2012 ◽  
Vol 33 (7) ◽  
pp. 1033-1035 ◽  
Author(s):  
Qinghong Zheng ◽  
Feng Huang ◽  
Jin Huang ◽  
Qichan Hu ◽  
Dagui Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
High Responsivity ◽  
Solar Blind

Balanced performance for β-Ga2O3 solar blind photodetectors: The role of oxygen vacancies

2021 ◽  
Vol 112 ◽  
pp. 110808
Author(s):  
Jiang Wang ◽  
Yuanqiang Xiong ◽  
Lijuan Ye ◽  
Wanjun Li ◽  
Guoping Qin ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Solar Blind

High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

2021 ◽  
Vol 42 (4) ◽  
pp. 545-548
Author(s):  
Zhe Li ◽  
Zhaoqing Feng ◽  
Yu Xu ◽  
Qian Feng ◽  
Weidong Zhu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Hafnium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Solar Blind

scholarly journals Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4497-4503
Author(s):  
Liying Zhang ◽  
Xiangqian Xiu ◽  
Yuewen Li ◽  
Yuxia Zhu ◽  
Xuemei Hua ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Light Trapping ◽  
High Surface ◽  
Volume Ratio ◽  
Average Diameter ◽  
Nanowire Arrays ◽  
Etching Technique ◽  
Inductively Coupled ◽  
Solar Blind ◽  
Vertically Aligned

AbstractVertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

scholarly journals Ultrawide-Bandgap Semiconductors: Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors (Adv. Funct. Mater. 9/2019)

2019 ◽  
Vol 29 (9) ◽  
pp. 1970057 ◽  
Author(s):  
Chao Xie ◽  
Xing-Tong Lu ◽  
Xiao-Wei Tong ◽  
Zhi-Xiang Zhang ◽  
Feng-Xia Liang ◽  
...  
Keyword(s):  
Recent Progress ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Bandgap Semiconductors ◽  
Ultraviolet Photodetectors

Ta$_{2}$O$_{5}$ Solar-Blind Photodetectors

2011 ◽  
Vol 11 (10) ◽  
pp. 2372-2373 ◽  
Author(s):  
C. J. Chiu ◽  
W. Y. Weng ◽  
T. J. Hsueh ◽  
S. J. Chang ◽  
G. J. Huang ◽  
...  
Keyword(s):  
Solar Blind
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