Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition

Dmitry M. Zhernokletov; Muhammad A. Negara; Rathnait D. Long; Shaul Aloni; Dennis Nordlund; Paul C. McIntyre

doi:10.1021/acsami.5b01600

Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b01600 ◽

2015 ◽

Vol 7 (23) ◽

pp. 12774-12780 ◽

Cited By ~ 26

Author(s):

Dmitry M. Zhernokletov ◽

Muhammad A. Negara ◽

Rathnait D. Long ◽

Shaul Aloni ◽

Dennis Nordlund ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Surface Preparation ◽

Atomic Layer ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Density Reduction ◽

Layer Deposition

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Heteroepitaxy of La2O3 and La2–xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

Nano Letters ◽

10.1021/nl3041349 ◽

2013 ◽

Vol 13 (2) ◽

pp. 594-599 ◽

Cited By ~ 68

Author(s):

Xinwei Wang ◽

Lin Dong ◽

Jingyun Zhang ◽

Yiqun Liu ◽

Peide D. Ye ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Layer Deposition

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Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

IEEE Electron Device Letters ◽

10.1109/led.2015.2486771 ◽

2015 ◽

Vol 36 (12) ◽

pp. 1277-1280 ◽

Cited By ~ 21

Author(s):

Quang Ho Luc ◽

Huy Binh Do ◽

Minh Thien Huu Ha ◽

Chenming Calvin Hu ◽

Yueh Chin Lin ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Oxide Thickness ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Equivalent Oxide Thickness ◽

Layer Deposition

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Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2018.08.034 ◽

2019 ◽

Vol 463 ◽

pp. 758-766 ◽

Cited By ~ 4

Author(s):

Iljo Kwak ◽

Mahmut Kavrik ◽

Jun Hong Park ◽

Larry Grissom ◽

Bernd Fruhberger ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

2D Materials ◽

Atomic Layer ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Gate Oxides ◽

Layer Deposition

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Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Journal of Applied Physics ◽

10.1063/1.4808093 ◽

2013 ◽

Vol 113 (20) ◽

pp. 204505 ◽

Cited By ~ 32

Author(s):

Christine M. Jackson ◽

Aaron R. Arehart ◽

Emre Cinkilic ◽

Brian McSkimming ◽

James S. Speck ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Deep Level ◽

Atomic Layer ◽

Interface Trap ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Surface preparation of gold nanostructures on glass by ultraviolet ozone and oxygen plasma for thermal atomic layer deposition of Al2O3

Thin Solid Films ◽

10.1016/j.tsf.2016.05.043 ◽

2016 ◽

Vol 612 ◽

pp. 141-146 ◽

Cited By ~ 2

Author(s):

Cady A. Lancaster ◽

Jennifer S. Shumaker-Parry

Keyword(s):

Atomic Layer Deposition ◽

Oxygen Plasma ◽

Surface Preparation ◽

Atomic Layer ◽

Gold Nanostructures ◽

Layer Deposition

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Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density

Applied Physics Letters ◽

10.1063/1.1885167 ◽

2005 ◽

Vol 86 (11) ◽

pp. 112907 ◽

Cited By ~ 45

Author(s):

Jaehoo Park ◽

Moonju Cho ◽

Seong Keun Kim ◽

Tae Joo Park ◽

Suk Woo Lee ◽

...

Keyword(s):

Dielectric Property ◽

Oxygen Concentration ◽

Atomic Layer ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap

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Influence of Deposition Temperature of Atomic-Layer-Deposited HfO2 Films on Interfacial Chemical Structure and Interface Trap Density

ECS Transactions ◽

10.1149/1.2209291 ◽

2019 ◽

Vol 1 (5) ◽

pp. 419-424

Author(s):

Jeong Hwan Kim ◽

Taejoo Park ◽

C.S. Hwang ◽

Sug H. Hong ◽

Minha Seo

Keyword(s):

Deposition Temperature ◽

Chemical Structure ◽

Atomic Layer ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap

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Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

2015 Symposium on VLSI Technology (VLSI Technology) ◽

10.1109/vlsit.2015.7223654 ◽

2015 ◽

Cited By ~ 19

Author(s):

H. Mertens ◽

R. Ritzenthaler ◽

H. Arimura ◽

J. Franco ◽

F. Sebaai ◽

...

Keyword(s):

High Pressure ◽

Performance Improvement ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Metal Gate ◽

Density Reduction ◽

And Performance

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Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD

The Journal of Chemical Physics ◽

10.1063/1.4967811 ◽

2017 ◽

Vol 146 (5) ◽

pp. 052811 ◽

Cited By ~ 27

Author(s):

Paul C. Lemaire ◽

Mariah King ◽

Gregory N. Parsons

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Surface Preparation ◽

Atomic Layer ◽

Substrate Selectivity ◽

Oxide Composition ◽

Layer Deposition ◽

Nucleation Mechanisms ◽

Deposition Effect ◽

Effect Of Surface

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Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

Journal of Applied Physics ◽

10.1063/1.3596761 ◽

2011 ◽

Vol 109 (12) ◽

pp. 124304 ◽

Cited By ~ 37

Author(s):

N. Y. Garces ◽

V. D. Wheeler ◽

J. K. Hite ◽

G. G. Jernigan ◽

J. L. Tedesco ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Surface Preparation ◽

Atomic Layer ◽

Epitaxial Graphene ◽

Graphene Surface ◽

Layer Deposition

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