Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal
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1993 ◽
pp. 345-352
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2015 ◽
Vol 7
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pp. 12774-12780
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2017 ◽
Vol 64
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pp. 1412-1417
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Vol 28
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pp. 232-234
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Vol 55
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2018 ◽
Vol 139
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pp. 7-11
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