Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

2016 ◽  
Author(s):  
Yen-Ku Lin ◽  
Shuichi Noda ◽  
Ruey-Bor Lee ◽  
Chia-Ching Huang ◽  
Quang Ho Luc ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Neutral Beam ◽  
Enhancement Mode ◽  
Low Threshold ◽  
Voltage Hysteresis ◽  
Gate Recess

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate

scholarly journals Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications

2020 ◽  
pp. 1-1
Author(s):  
A. Razavieh ◽  
Y. Chen ◽  
T. Ethirajan ◽  
M. Gu ◽  
S. Cimino ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Low Threshold

Cyanophenoxy-Substituted Silicon Phthalocyanines for Low Threshold Voltage n-Type Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Silicon Phthalocyanines ◽  
Low Threshold

Efficient preparation of polymer nanofibers by needle roller electrospinning with low threshold voltage

2018 ◽  
Vol 59 (4) ◽  
pp. 745-751 ◽  
Author(s):  
Yanping Zhang ◽  
Liyan Zhang ◽  
Lisheng Cheng ◽  
Yongxin Qin ◽  
Yi Li ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Polymer Nanofibers ◽  
Low Threshold

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

Inner-Gate-Engineered GAA MOSFET to Enhance the Electrostatic Integrity

NANO ◽  
2019 ◽  
Vol 14 (10) ◽  
pp. 1950128 ◽  
Author(s):  
Biswajit Jena ◽  
Sidhartha Dash ◽  
Soumya Ranjan Routray ◽  
Guru Prasad Mishra
Keyword(s):  
Threshold Voltage ◽  
Packing Density ◽  
Figures Of Merit ◽  
Engineering Technique ◽  
Conventional Structure ◽  
Low Threshold ◽  
Gate Engineering ◽  
Electrostatic Control ◽  
Technology Nodes ◽  
Rf Performances

Gate-all-around (GAA) MOSFETs are the best multi-gate MOSFET structure due to their strong electrostatic control over the channel. The electrostatic controllability can be enhanced further by applying some gate engineering technique to the existing GAA structure. This paper investigates the effect of inner gate (core gate) on the electrostatic performance of conventional GAA MOSFET. The inner gate engineering increases both the electrostatic control and packing density of GAA MOSFET. In this paper, we have presented an inner-gate-engineered (IGE) GAA MOSFET and inspected its advantages over conventional counterparts. The proposed structure exhibits higher [Formula: see text] ratio, low threshold voltage and improved RF performances as compared to the conventional structure. Analytic simulation has been carried out for numerous figures of merit (FOMs) for different technology nodes.

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