A Resonantly Driven, Electroluminescent Metal Oxide Semiconductor Capacitor with High Power Efficiency

ACS Nano ◽  
2021 ◽  
Vol 15 (9) ◽  
pp. 15210-15217
Author(s):  
Vivian Wang ◽  
Ali Javey
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...


2019 ◽  
Vol 467-468 ◽  
pp. 1161-1169 ◽  
Author(s):  
Min Baik ◽  
Hang-Kyu Kang ◽  
Yu-Seon Kang ◽  
Kwang-Sik Jeong ◽  
Changmin Lee ◽  
...  

Nature ◽  
2004 ◽  
Vol 427 (6975) ◽  
pp. 615-618 ◽  
Author(s):  
Ansheng Liu ◽  
Richard Jones ◽  
Ling Liao ◽  
Dean Samara-Rubio ◽  
Doron Rubin ◽  
...  

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