Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler–Nordheim Tunneling

ACS Nano ◽  
2019 ◽  
Author(s):  
Haiyang Zou ◽  
Xiaogan Li ◽  
Guozhang Dai ◽  
Wenbo Peng ◽  
Yong Ding ◽  
...  
Keyword(s):  
Nordheim Tunneling

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler–Nordheim Tunneling Program/Erase Operation

2009 ◽  
Vol 30 (2) ◽  
pp. 171-173 ◽  
Author(s):  
C. Sandhya ◽  
U. Ganguly ◽  
N. Chattar ◽  
C. Olsen ◽  
S.M. Seutter ◽  
...  
Keyword(s):  
Charge Trap ◽  
Nordheim Tunneling

Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

1985 ◽  
Vol 28 (7) ◽  
pp. 717-720 ◽  
Author(s):  
Y. Nissan-Cohen ◽  
J. Shappir ◽  
D. Frohman-Bentchkowsky
Keyword(s):  
Charge Trapping ◽  
Tunneling Currents ◽  
Mos Structures ◽  
Nordheim Tunneling

scholarly journals Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

2014 ◽  
Vol 105 (14) ◽  
pp. 142108 ◽  
Author(s):  
Patrick Fiorenza ◽  
Alessia Frazzetto ◽  
Alfio Guarnera ◽  
Mario Saggio ◽  
Fabrizio Roccaforte
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nordheim Tunneling

Electron transport properties of Si nanosheets: Transition from direct tunneling to Fowler-Nordheim tunneling

2011 ◽  
Vol 99 (2) ◽  
pp. 023107 ◽  
Author(s):  
Takashi Ikuno ◽  
Hirotaka Okamoto ◽  
Yusuke Sugiyama ◽  
Hideyuki Nakano ◽  
Fumihiko Yamada ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Direct Tunneling ◽  
Electron Transport Properties ◽  
Nordheim Tunneling

IVB-3 Fowler-Nordheim tunneling in MIS structures

1981 ◽  
Vol 28 (10) ◽  
pp. 1237-1238
Author(s):  
G. Krieger ◽  
R.M. Swanson
Keyword(s):  
Nordheim Tunneling ◽  
Mis Structures

Nanoscale metal transistor control of Fowler–Nordheim tunneling currents through 16 nm insulating channel

1999 ◽  
Vol 85 (9) ◽  
pp. 6912-6916 ◽  
Author(s):  
Kouji Fujimaru ◽  
Ryouta Sasajima ◽  
Hideki Matsumura
Keyword(s):  
Tunneling Currents ◽  
Nordheim Tunneling
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