IVB-3 Fowler-Nordheim tunneling in MIS structures

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

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Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

phys stat sol (a) ◽

10.1002/pssa.2210730251 ◽

1982 ◽

Vol 73 (2) ◽

pp. K179-K183 ◽

Cited By ~ 1

Author(s):

S. A. Asimov ◽

D. A. Aronov ◽

D. K. Isamukhamedova ◽

Yu. M. Yuabov

Keyword(s):

Charge Carriers ◽

Transient Processes ◽

Current Reversal ◽

Mis Structures

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Initial and radiation-induced charge distribution in silicon oxynitride MIS structures

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1971.17206 ◽

1971 ◽

Vol 18 (6) ◽

pp. 384-386 ◽

Cited By ~ 4

Author(s):

J.D. Ashner

Keyword(s):

Charge Distribution ◽

Silicon Oxynitride ◽

Radiation Induced ◽

Induced Charge ◽

Mis Structures

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Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler–Nordheim Tunneling Program/Erase Operation

IEEE Electron Device Letters ◽

10.1109/led.2008.2009552 ◽

2009 ◽

Vol 30 (2) ◽

pp. 171-173 ◽

Cited By ~ 21

Author(s):

C. Sandhya ◽

U. Ganguly ◽

N. Chattar ◽

C. Olsen ◽

S.M. Seutter ◽

...

Keyword(s):

Charge Trap ◽

Nordheim Tunneling

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The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures

10.1117/12.802478 ◽

2008 ◽

Author(s):

G. V. Chucheva ◽

A. G. Zhdan

Keyword(s):

Charge Density ◽

Surface Charge ◽

Surface Potential ◽

Surface Charge Density ◽

Depletion Region ◽

Semiconductor Surface ◽

Capacity Analysis ◽

New Approach ◽

Mis Structures

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MP-B5 graded or stepped insulator MIS structures (GI-MIS or SI-MIS)

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1979.19709 ◽

1979 ◽

Vol 26 (11) ◽

pp. 1831-1832

Author(s):

D.J. DiMaria ◽

D.W. Dong

Keyword(s):

Mis Structures

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Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

Solid-State Electronics ◽

10.1016/0038-1101(85)90022-x ◽

1985 ◽

Vol 28 (7) ◽

pp. 717-720 ◽

Cited By ~ 45

Author(s):

Y. Nissan-Cohen ◽

J. Shappir ◽

D. Frohman-Bentchkowsky

Keyword(s):

Charge Trapping ◽

Tunneling Currents ◽

Mos Structures ◽

Nordheim Tunneling

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A Study of Pt/AlN/6H-SiC MIS Structures for Device Applications

MRS Proceedings ◽

10.1557/proc-622-t6.5.1 ◽

2000 ◽

Vol 622 ◽

Cited By ~ 1

Author(s):

Margarita P. Thompson ◽

Gregory W. Auner ◽

Changhe Huang ◽

James N. Hilfiker

Keyword(s):

Plasma Source ◽

Film Structure ◽

Low Leakage ◽

Low Leakage Current ◽

Current Voltage ◽

Aln Film ◽

Capacitance Voltage ◽

Device Applications ◽

Current Densities ◽

Mis Structures

ABSTRACTAlN films with thicknesses from 53 to 79 nm were deposited on 6H-SiC substrates via Plasma Source Molecular Beam Epitaxy (PSMBE). The influence of deposition temperature on the growth mode and film roughness was assessed. The optical constants of the films in the range 0.73-8.75 eV were determined using spectroscopic ellipsometry. Pt/AlN/6H-SiC MIS structures were created and current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at room temperature and at 250°C. Most of the MIS structures showed rectifying I-V characteristics regardless of growth temperature. A 120-nm-thick AlN film was deposited at 500°C. MIS structures created on this film showed a very low leakage current densities of 6×10−8 A/cm2. The dielectric constant of the film was estimated at approximately 9. The relation between film structure and electrical properties of the films is discussed.

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