Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices

ACS Nano ◽  
2019 ◽  
Vol 13 (12) ◽  
pp. 14519-14528 ◽  
Author(s):  
Yao Wen ◽  
Peng He ◽  
Qisheng Wang ◽  
Yuyu Yao ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Van Der Waals Heterostructures

scholarly journals Effect of an external electric field on the electronic properties of SnS2/PbI2 van der Waals heterostructures

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25582-25588 ◽  
Author(s):  
Yaqiang Ma ◽  
Xu Zhao ◽  
Mengmeng Niu ◽  
Xianqi Dai ◽  
Wei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Future Development ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Control Technology ◽  
Van Der Waals Heterostructures ◽  
Advanced Control ◽  
The Future

The future development of optoelectronic devices will require an advanced control technology in electronic properties, for example by an external electric field (Efield).

Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

2018 ◽  
Vol 6 (27) ◽  
pp. 7201-7206 ◽  
Author(s):  
Jimin Shang ◽  
Longfei Pan ◽  
Xiaoting Wang ◽  
Jingbo Li ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Normal Strain ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Typical Type ◽  
Direct Band

2D InSe/InTe van der Waals heterostructures with a direct band structure and typical type-II band alignment, effectively tuned by applying normal strain, are systematically discussed for future optoelectronic devices.

scholarly journals A roadmap for interlayer excitons

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Kai-Qiang Lin
Keyword(s):  
Momentum Space ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Real Space ◽  
Electron Hole ◽  
Van Der Waals Heterostructures ◽  
Exciton Condensation ◽  
Excitonic Properties

AbstractInterlayer excitons in van der Waals heterostructures have tunable electron–hole separation in both real space and momentum space, enabling unprecedented control over excitonic properties to be exploited in a wide array of future applications ranging from exciton condensation to valleytronic and optoelectronic devices.

Electronic properties and enhanced photocatalytic performance of van der Waals heterostructures of ZnO and Janus transition metal dichalcogenides

2020 ◽  
Vol 22 (18) ◽  
pp. 10351-10359 ◽  
Author(s):  
M. Idrees ◽  
H. U. Din ◽  
Shafiq Ur Rehman ◽  
M. Shafiq ◽  
Yasir Saeed ◽  
...  
Keyword(s):  
Photocatalytic Performance ◽  
2D Materials ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Promising Candidate ◽  
Van Der Waals Heterostructures ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
The Individual

Vertical stacking of two-dimensional materials into layered van der Waals heterostructures has recently been considered as a promising candidate for photocatalytic and optoelectronic devices because it can combine the advantages of the individual 2D materials.

Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures

2020 ◽  
Vol 22 (15) ◽  
pp. 7952-7961 ◽  
Author(s):  
Tuan V. Vu ◽  
Tan Phat Dao ◽  
M. Idrees ◽  
Huynh V. Phuc ◽  
Nguyen N. Hieu ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Functionalization ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Two Dimensional Materials

Constructing vertical heterostructures by placing graphene (Gr) on two-dimensional materials has recently emerged as an effective way to enhance the performance of nanoelectronic and optoelectronic devices.

Type-II InSe/MoSe2(WSe2) van der Waals heterostructures: vertical strain and electric field effects

2018 ◽  
Vol 6 (37) ◽  
pp. 10010-10019 ◽  
Author(s):  
Xueping Li ◽  
Guangrui Jia ◽  
Juan Du ◽  
Xiaohui Song ◽  
Congxin Xia ◽  
...  
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Electric Field Effects ◽  
Vertical Strain ◽  
Field Effects

InSe/MoSe2(WSe2) vdWHs with type-II alignment, effectively tuned by E-field and vertical strain, are systematically discussed for future applications in optoelectronic devices.

scholarly journals Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices

2016 ◽  
Vol 109 (19) ◽  
pp. 193111 ◽  
Author(s):  
Feng Wang ◽  
Lei Yin ◽  
Zhenxing Wang ◽  
Kai Xu ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Van Der Waals Heterostructures

scholarly journals Layer contribution to optical signals of van der Waals heterostructures

2021 ◽  
Author(s):  
Su-Yun Wang ◽  
Guo-Xing Chen ◽  
Qin-Qin Guo ◽  
Kaixuan Huang ◽  
Xi-Lin Zhang ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Structure Analysis ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Van Der Waals Heterostructures ◽  
Optical Signals

The optical signals (such as Raman scattering, absorption, reflection) of van der Waals heterostructures (vdWHs) are very important for structure analysis and the application of optoelectronic devices. However, there is...

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