scholarly journals Vapor-Transport Synthesis and Annealing Study of ZnxMg1–xO Nanowire Arrays for Selective, Solar-Blind UV-C Detection

ACS Omega ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 4899-4907 ◽  
Author(s):  
Ebraheem Ali Azhar ◽  
Jignesh Vanjaria ◽  
Seungho Ahn ◽  
Thomas Fou ◽  
Sandwip K. Dey ◽  
...  

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4497-4503
Author(s):  
Liying Zhang ◽  
Xiangqian Xiu ◽  
Yuewen Li ◽  
Yuxia Zhu ◽  
Xuemei Hua ◽  
...  

AbstractVertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.



Author(s):  
Norah Alwadai ◽  
Somak Mitra ◽  
Mohamed Nejib Hedhili ◽  
Hadeel Alamoudi ◽  
Bin Xin ◽  
...  


Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.



2021 ◽  
Author(s):  
Marco Girolami ◽  
Valerio Serpente ◽  
Matteo Mastellone ◽  
Marco Tardocchi ◽  
Marica Rebai ◽  
...  


Author(s):  
Urvashi Varshney ◽  
Neha Aggarwal ◽  
Govind Gupta

Different variants of novel coronavirus disease are spreading and emerging rapidly all over the world causing a health pandemic. With this sudden outbreak, ultraviolet-C (UV-C) sterilizing devices are being significantly...



2019 ◽  
Vol 7 (10) ◽  
pp. 3056-3063 ◽  
Author(s):  
Daotong You ◽  
Chunxiang Xu ◽  
Jie Zhao ◽  
Wei Zhang ◽  
Feifei Qin ◽  
...  

Well-aligned ZnO/Ga2O3 core/shell nanowire arrays were fabricated by VPT and the sputtering method as self-driven solar-blind photodetectors.



2010 ◽  
Vol 1256 ◽  
Author(s):  
Yoon Myung ◽  
Dong Myung Jang ◽  
Yong Jei Sohn ◽  
Tae Kwang Sung ◽  
Gyeong Bok Jung ◽  
...  

AbstractHigh-density TiO2-CdS and ZnO-CdS core-shell nanocable arrays were synthesized on large-area Ti substrates. The CdS layers were deposited on the pre-grown vertically-aligned TiO2 (rutile) and ZnO nanowire arrays, with a controlled thickness (10~50 nm), using the vapor transport method. The ZnO-CdS nanocables consisted of single-crystalline wurtzite CdS shells whose [001] direction was aligned along the [001] wire axis of the wurtzite ZnO core, which is distinctive from the polycrystalline shell of the TiO2-CdS nanocables. We fabricated the photoelectrochemical cell using the ZnO-CdS photoelectrode exhibits much more efficient hydrogen generation than that using the TiO2-CdS one.



APL Materials ◽  
2021 ◽  
Vol 9 (10) ◽  
pp. 101108
Author(s):  
Jinho Bae ◽  
Ji-Hyeon Park ◽  
Dae-Woo Jeon ◽  
Jihyun Kim


Carbon ◽  
2021 ◽  
Author(s):  
Marco Girolami ◽  
Valerio Serpente ◽  
Matteo Mastellone ◽  
Marco Tardocchi ◽  
Marica Rebai ◽  
...  


Author(s):  
G.S. VASILIEV ◽  
O.R. KUZICHKIN ◽  
D.I. SURZHIK ◽  
I.S. KONSTANTINOV

Communication systems of the solar-blind ultraviolet range UV-C from 200 to 280 nm enable communication in the absence of line of sight due to the strong scattering of UV radiation in the atmosphere. Creating a full-scale model of the UV communication system at the initial stage of technical implementation can be extremely difficult due to the high requirements for the components of the optical receiver and transmitter. An urgent task is to develop a technique for large-scale physical modeling of the UV-C coupling system, which allows evaluating the performance of the system under new conditions with new components based on experimental results obtained for initial conditions with initial components. Based on the analytical model of the UV communication system, a signal-to-noise ratio (SNR) conversion coefficient is introduced in the new system compared to the original one. The simulation of the UV communication system with varying light levels and the solar-blind filter model showed the effectiveness of the proposed method for simplifying the implementation of the UV communication system.



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