Correction to Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors

2010 ◽  
Vol 2 (4) ◽  
pp. 1273-1273
Author(s):  
Changdeuck Bae ◽  
Dongjo Kim ◽  
Sunmi Moon ◽  
Taeyoung Choi ◽  
Youngmin Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor

Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors

2010 ◽  
Vol 2 (3) ◽  
pp. 626-632 ◽  
Author(s):  
Changdeuck Bae ◽  
Dongjo Kim ◽  
Sunmi Moon ◽  
Taeyoung Choi ◽  
Youngmin Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor

scholarly journals High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

2016 ◽  
Vol 4 (34) ◽  
pp. 7917-7923 ◽  
Author(s):  
Yu Wang ◽  
Takio Kizu ◽  
Lei Song ◽  
Yujia Zhang ◽  
Sai Jiang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Ferroelectric Polymer ◽  
Effect Transistor

High-performance Fe-FET memories using InSiO and P(VDF–TrFE) as the semiconductor and dielectric, respectively, were fabricated with a carrier mobility of 84.1 cm V−1 s−1.

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