Mesoscopic Structural Length Scales in P3HT/PCBM Mixtures Remain Invariant for Various Processing Conditions

ABSTRACTDuring processes of mechanical alloying the characteristic structural length scales of an alloy, including the phase domain size and the crystallite grain size, decrease gradually to a nanocrystalline or even amorphous final state. This method therefore allows a unique avenue to explore the structure-property relationship over several orders of magnitude in length scale. In this work we have considered an ideal equiatomic Ti-Zr system deformed through multiple cold-rolling passes to refine the structural length scales into the nanometer range. The variation of the hardness of the system with decreasing length scale is discussed in terms of traditional Hall-Petch scaling, chemical mixing and the phase evolution of the system, as well as other possible contributions to the hardness variations during processing.

Download Full-text

Sensitivity of structural models of composite material to structural length scales

International Applied Mechanics ◽

10.1007/s10778-006-0206-9 ◽

2006 ◽

Vol 42 (12) ◽

pp. 1364-1370 ◽

Cited By ~ 9

Author(s):

J. J. Rushchitsky

Keyword(s):

Composite Material ◽

Structural Models ◽

Length Scales ◽

Structural Length

Download Full-text

Rescaling of structural length scales for “soft effective segment” representations of polymers in good solvent

Soft Matter ◽

10.1039/c1sm05335c ◽

2011 ◽

Vol 7 (11) ◽

pp. 5255 ◽

Cited By ~ 12

Author(s):

Ivan Coluzza ◽

Barbara Capone ◽

Jean-Pierre Hansen

Keyword(s):

Length Scales ◽

Structural Length

Download Full-text

Advances in our understanding of the structure and functionality of edible fats and fat mimetics

Soft Matter ◽

10.1039/c9sm01704f ◽

2020 ◽

Vol 16 (2) ◽

pp. 289-306 ◽

Cited By ~ 10

Author(s):

Alejandro G. Marangoni ◽

John P. M. van Duynhoven ◽

Nuria C. Acevedo ◽

Reed A. Nicholson ◽

Ashok R. Patel

Keyword(s):

Fractal Aggregates ◽

Length Scales ◽

Edible Fats ◽

Fat Crystal Network ◽

Crystal Network ◽

Structural Length

Structural length scales within a fat crystal network, from TAG molecules packing into lamellae, crystalline nanoplatelets and fractal aggregates of nanoplatelets.

Download Full-text

Formation of defects in implanted hipox-structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131668 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1406-1407

Author(s):

Peter Pegler ◽

N. David Theodore ◽

Ming Pan

Keyword(s):

High Pressure ◽

Cross Section ◽

Semiconductor Devices ◽

Silicon Substrates ◽

Processing Conditions ◽

Pressure Oxidation ◽

Deep Trench ◽

Local Oxidation ◽

Trench Isolation ◽

And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Download Full-text

Progressive Debonding of Multilayer Interconnect Structures

MRS Proceedings ◽

10.1557/proc-473-21 ◽

1997 ◽

Vol 473 ◽

Cited By ~ 9

Author(s):

Michael Lane ◽

Robert Ware ◽

Steven Voss ◽

Qing Ma ◽

Harry Fujimoto ◽

...

Keyword(s):

Thin Films ◽

Crack Growth ◽

Driving Force ◽

Adhesion Energy ◽

Time Dependent ◽

Multilayer Thin Films ◽

Processing Conditions ◽

Interface Morphology ◽

Entire Sample ◽

Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

Download Full-text