Gas-phase composition and structure of metal oxide tetrafluorides

1974 ◽  
Vol 13 (10) ◽  
pp. 2366-2370 ◽  
Author(s):  
Robert T. Paine ◽  
Robin S. McDowell
Author(s):  
G. N. Gerasimov ◽  
V. F. Gromov ◽  
M. I. Ikim ◽  
L. I. Trachtenberg

Abstract The relationship between the structure and properties of nanoscale conductometric sensors based on binary mixtures of metal oxides in the detection of reducing gases in the environment is considered. The sensory effect in such systems is determined by the chemisorption of oxygen molecules and the detected gas on the surface of metal oxide catalytically active particles, the transfer of the reaction products to electron-rich nanoparticles, and subsequent reactions. Particular attention is paid to the doping of nanoparticles of the sensitive layer. In particular, the effect of doping on the concentration of oxygen vacancies, the activity of oxygen centers, and the adsorption properties of nanoparticles is discussed. In addition, the role of heterogeneous contacts is analyzed.


2017 ◽  
Vol 91 (9) ◽  
pp. 1609-1620 ◽  
Author(s):  
G. N. Gerasimov ◽  
V. F. Gromov ◽  
T. V. Belysheva ◽  
M. I. Ikim ◽  
L. I. Trakhtenberg

1985 ◽  
Vol 46 (C4) ◽  
pp. C4-135-C4-140 ◽  
Author(s):  
M. Leseur ◽  
B. Pieraggi

2019 ◽  
pp. 223-262
Author(s):  
Bjorn Mysen ◽  
Pascal Richet

Vacuum ◽  
2008 ◽  
Vol 83 (3) ◽  
pp. 606-609 ◽  
Author(s):  
Kazuhiro Kato ◽  
Hideo Omoto ◽  
Atsushi Takamatsu

2005 ◽  
Vol 483-485 ◽  
pp. 25-30 ◽  
Author(s):  
Peter J. Wellmann ◽  
Thomas L. Straubinger ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Ulrike Künecke ◽  
...  

We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.


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