Diels-Alder cycloadditions of a bicyclobutane bridged diene. Acid and thermal stability of benzvalene derivatives as a function of substituents

1978 ◽  
Vol 100 (3) ◽  
pp. 860-871 ◽  
Author(s):  
H. Hogeveen ◽  
W. F. J. Huurdeman
Keyword(s):  
Thermal Stability ◽  
Diels Alder ◽  
Thermal Stability Of

Stability of Diels–Alder photoadducts in macromolecules

2018 ◽  
Vol 9 (28) ◽  
pp. 3850-3854 ◽  
Author(s):  
Charlotte Petit ◽  
Lukas D. Bangert ◽  
Mahdi Abbasi ◽  
Manfred Wilhelm ◽  
Anja S. Goldmann ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Soft Matter ◽  
Molecular Level ◽  
Diels Alder ◽  
Thermal Stability Of

The study investigates the thermal stability of ligation points resulting from photochemically induced Diels–Alder reactions within soft matter materials on the molecular level.

scholarly journals Bio-Based Thermo-Reversible Aliphatic Polycarbonate Network

Molecules ◽  
2019 ◽  
Vol 25 (1) ◽  
pp. 74 ◽  
Author(s):  
Pierre-Luc Durand ◽  
Etienne Grau ◽  
Henri Cramail
Keyword(s):  
Thermal Stability ◽  
Biomedical Applications ◽  
Diels Alder ◽  
Cross Linking ◽  
Important Class ◽  
Aliphatic Polycarbonate ◽  
Biomedical Field ◽  
The Cross ◽  
Thermal Stability Of

Aliphatic polycarbonates represent an important class of materials with notable applications in the biomedical field. In this work, low Tg furan-functionalized bio-based aliphatic polycarbonates were cross-linked thanks to the Diels–Alder (DA) reaction with a bis-maleimide as the cross-linking agent. The thermo-reversible DA reaction allowed for the preparation of reversible cross-linked polycarbonate materials with tuneable properties as a function of the pendent furan content that was grafted on the polycarbonate backbone. The possibility to decrosslink the network around 70 °C could be an advantage for biomedical applications, despite the rather poor thermal stability of the furan-functionalized cross-linked polycarbonates.

scholarly journals The influence of stereochemistry on the reactivity of the Diels–Alder cycloaddition and the implications for reversible network polymerization

2019 ◽  
Vol 10 (4) ◽  
pp. 473-485 ◽  
Author(s):  
Audrey Cuvellier ◽  
Robrecht Verhelle ◽  
Joost Brancart ◽  
Bram Vanderborght ◽  
Guy Van Assche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Properties ◽  
Polymer Network ◽  
Diels Alder ◽  
Thermal Stability Of

The differences in reactivity and thermal stability of the stereoisomers define the thermal properties and responsiveness of the reversible polymer network.

The use of bisfuroic acid derivatives in the curing of bismaleimides

1994 ◽  
Vol 6 (3) ◽  
pp. 249-256 ◽  
Author(s):  
D G Hawthorne ◽  
J H Hodgkin ◽  
M B Jackson ◽  
T C Morton
Keyword(s):  
Thermal Stability ◽  
Differential Scanning Calorimetry ◽  
Thermal Behaviour ◽  
Thermal Gravimetric Analysis ◽  
Diels Alder ◽  
Gravimetric Analysis ◽  
Resin System ◽  
Thermal Gravimetric ◽  
Scanning Calorimetry ◽  
Thermal Stability Of

The use of 2,2-bis(4-[(2-carboxy-5-furyl)oxy]phenyl)propane as a Diels-Alder based co-reactant for curing bismaleimides was investigated. Differential scanning calorimetry and thermal gravimetric analysis were used to study the thermal behaviour of this reactant on its own and in the presence of 1,1'-(4methylene-4,1-phenylene)bismaleimide. The range of products formed under different cure conditions was determined by vFnR spectroscopy. The DMTA characteristics and thermal stability of cured laminates made from this resin system have been investigated. It is concluded that the thermal stability and other properties of laminates made from this system are only comparable to those of a typical commercial bismaleimide system.

scholarly journals Approaches to Open Fullerenes: Synthesis and Thermal Stability of cis-1 Bis(isobenzofuran) Diels—Alder Adducts of C60.

ChemInform ◽  
2007 ◽  
Vol 38 (26) ◽  
Author(s):  
Michael Sander ◽  
Thibaut Jarrosson ◽  
Shih-Ching Chuang ◽  
Saeed I. Khan ◽  
Yves Rubin
Keyword(s):  
Thermal Stability ◽  
Diels Alder ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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