Length-Dependent Transport in Molecular Junctions Based on SAMs of Alkanethiols and Alkanedithiols:  Effect of Metal Work Function and Applied Bias on Tunneling Efficiency and Contact Resistance

2004 ◽  
Vol 126 (43) ◽  
pp. 14287-14296 ◽  
Author(s):  
Vincent B. Engelkes ◽  
Jeremy M. Beebe ◽  
C. Daniel Frisbie
Keyword(s):  
Contact Resistance ◽  
Work Function ◽  
Molecular Junctions ◽  
Applied Bias ◽  
Metal Work Function ◽  
Dependent Transport ◽  
Metal Work

Contact Resistance in Metal−Molecule−Metal Junctions Based on Aliphatic SAMs:  Effects of Surface Linker and Metal Work Function

2002 ◽  
Vol 124 (38) ◽  
pp. 11268-11269 ◽  
Author(s):  
Jeremy M. Beebe ◽  
Vincent B. Engelkes ◽  
Larry L. Miller ◽  
C. Daniel Frisbie
Keyword(s):  
Contact Resistance ◽  
Work Function ◽  
Metal Work Function ◽  
Metal Work

Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability

Nano Futures ◽  
2021 ◽  
Author(s):  
Min-Won Kim ◽  
Ji-Hun Kim ◽  
Jun-Seong Park ◽  
Byoung-Seok Lee ◽  
Sangdong Yoo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Thermal Instability ◽  
Schottky Contact ◽  
Memory Cell ◽  
Cross Point ◽  
Operation Temperature ◽  
Metal Work Function ◽  
Metal Work ◽  
Contact Metal

Abstract In a two-terminal-electrode vertical thyristor, the latch-up and latch-down voltages are decreased when the memory operation temperature of the memory cells increases, resulting in a severe reliability issue (i.e., thermal instability). This study fundamentally solves the thermal instability of a vertical-thyristor by achieving a cross-point memory-cell array using a vertical-thyristor with a structure of vertical n++-emitter, p+-base, n+-base, and p++-emitter. The vertical-thyristor using a Schottky contact metal emitter instead of an n++-Si emitter significantly improves the thermal stability between 293 and 373 K. Particularly, the improvement degree of the thermal stability is increased significantly with the use of the Schottky contact metal work function. Because the thermal instability (i.e., degree of latch-up voltage decrement vs. memory operation temperature) decreases with an increase in the Schottky contact metal work function, the dependency of the forward current density between the Schottky contact metal and p+-Si based on the memory operation temperature reduces with increase in the Schottky contact metal work function. Consequently, a higher Schottky contact metal work function produces a higher degree of improvement in the thermal stability, i.e., W (4.50 eV), Ti (4.33 eV), Ta (4.25 eV), and Al (4.12 eV). Further research on the fabrication process of a Schottky contact metal emitter vertical-thyristor is essential for the fabrication of a 3-D cross-point memory-cell.

Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function

2021 ◽  
pp. 1-1
Author(s):  
Yi-Fan Chen ◽  
Lee-Wen Hsu ◽  
Chia-Wei Hu ◽  
Guan-Ting Lai ◽  
Yung-Hsien Wu
Keyword(s):  
Work Function ◽  
Tunnel Junctions ◽  
Resistance Ratio ◽  
Metal Work Function ◽  
Metal Work

scholarly journals Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode

AIP Advances ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 115011 ◽  
Author(s):  
Kazuki Isobe ◽  
Masamichi Akazawa
Keyword(s):  
Surface Treatment ◽  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diode ◽  
Metal Work Function ◽  
Metal Work

Understanding gate metal work function (mWF) impact on device reliability — A holistic approach

2018 ◽  
Author(s):  
P. Srinivasan ◽  
R. Ranjan ◽  
S. Cimino ◽  
A. Zainuddin ◽  
B. Kannan ◽  
...  
Keyword(s):  
Work Function ◽  
Holistic Approach ◽  
Metal Work Function ◽  
Device Reliability ◽  
Metal Work
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