scholarly journals Errata: “Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride” [J. Vac. Sci. Technol. A 38, 050805 (2020)]”

2020 ◽  
Vol 38 (6) ◽  
pp. 067001
Author(s):  
Kayla A. Cooley ◽  
Haila M. Aldosari ◽  
Kezhou Yang ◽  
Suzanne E. Mohney
Keyword(s):  
Contact Resistance ◽  
Phase Change ◽  
Work Function ◽  
Phase Change Materials ◽  
Electrical Contacts ◽  
Germanium Telluride ◽  
Metal Work Function ◽  
Metal Work

Contact Resistance in Metal−Molecule−Metal Junctions Based on Aliphatic SAMs:  Effects of Surface Linker and Metal Work Function

2002 ◽  
Vol 124 (38) ◽  
pp. 11268-11269 ◽  
Author(s):  
Jeremy M. Beebe ◽  
Vincent B. Engelkes ◽  
Larry L. Miller ◽  
C. Daniel Frisbie
Keyword(s):  
Contact Resistance ◽  
Work Function ◽  
Metal Work Function ◽  
Metal Work

Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles

2012 ◽  
Vol 717-720 ◽  
pp. 857-860 ◽  
Author(s):  
Min Seok Kang ◽  
Jung Ho Lee ◽  
Anders Hallén ◽  
Carl Mikael Zetterling ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Work Function ◽  
Barrier Height ◽  
Doping Concentration ◽  
Electrical Contacts ◽  
Nano Particles ◽  
Ag Nps ◽  
Au Nps ◽  
Metal Work Function ◽  
Metal Work ◽  
Au Nano Particles

We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded nano-particles (NPs) on 4H-SiC surfaces. Both n-type epitaxial layers with ND=1×1016 cm-3, and layers doped by phosphorous implantation to a doping concentration of ~1×1019 cm-3 are used. The barrier height is reduced with increasing doping concentration and the silver (Ag) nano-particles (R~18.5 nm) further enhances the local electric field of the electrical contacts to 4H-SiC in comparison to gold (Au) nano-particles (R~20.2 nm). In the case of ion-implanted samples, the barrier height of the fabricated SiC diode structures with embedded Ag-NPs was significantly reduced by ~0.09 eV and ~0.25 eV compared to the samples with Au-NPs and the sample without NPs, respectively.

Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability

Nano Futures ◽  
2021 ◽  
Author(s):  
Min-Won Kim ◽  
Ji-Hun Kim ◽  
Jun-Seong Park ◽  
Byoung-Seok Lee ◽  
Sangdong Yoo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Thermal Instability ◽  
Schottky Contact ◽  
Memory Cell ◽  
Cross Point ◽  
Operation Temperature ◽  
Metal Work Function ◽  
Metal Work ◽  
Contact Metal

Abstract In a two-terminal-electrode vertical thyristor, the latch-up and latch-down voltages are decreased when the memory operation temperature of the memory cells increases, resulting in a severe reliability issue (i.e., thermal instability). This study fundamentally solves the thermal instability of a vertical-thyristor by achieving a cross-point memory-cell array using a vertical-thyristor with a structure of vertical n++-emitter, p+-base, n+-base, and p++-emitter. The vertical-thyristor using a Schottky contact metal emitter instead of an n++-Si emitter significantly improves the thermal stability between 293 and 373 K. Particularly, the improvement degree of the thermal stability is increased significantly with the use of the Schottky contact metal work function. Because the thermal instability (i.e., degree of latch-up voltage decrement vs. memory operation temperature) decreases with an increase in the Schottky contact metal work function, the dependency of the forward current density between the Schottky contact metal and p+-Si based on the memory operation temperature reduces with increase in the Schottky contact metal work function. Consequently, a higher Schottky contact metal work function produces a higher degree of improvement in the thermal stability, i.e., W (4.50 eV), Ti (4.33 eV), Ta (4.25 eV), and Al (4.12 eV). Further research on the fabrication process of a Schottky contact metal emitter vertical-thyristor is essential for the fabrication of a 3-D cross-point memory-cell.

Thermal Contact Resistance of Phase Change and Grease Type Polymeric Materials

2000 ◽  
Author(s):  
Ravi S. Prasher ◽  
Craig Simmons ◽  
Gary Solbrekken
Keyword(s):  
Thermal Conductivity ◽  
Contact Resistance ◽  
Phase Change ◽  
High Performance ◽  
Phase Change Materials ◽  
Thermal Contact ◽  
Polymeric Materials ◽  
Thermal Interface Material ◽  
Heat Spreader ◽  
Thermal Grease

Abstract Thermal interface material (TIM) between the die and the heat spreader or between the heat spreader and the heat sink in any electronic package plays a very important role in the thermal management of electronic cooling. Due to increased power and power density high-performance TIMs are sought every day. Phase change materials (PCM) seem to be very good alternative to traditionally used thermal greases because of various reasons. These phase change materials also have the advantage of being reworked easily without damaging the die. Typically these phase change materials are polymer based and are particle laden to enhance their thermal conductivity. The thermal conductivity of these materials is relatively well understood than their contact resistance. Current work focuses on explicitly measuring the contact resistance and the thermal conductivity of a particular phase change TIM and some silicon-based greases. Effect of various parameters, which can affect the contact resistance of theses TIMs and Greases, are also captured. The steady state measurements of the thermal conductivity and the contact resistance was done on an interface tester. In general the work on the contact resistance of fluid-like polymer based TIM, such as thermal grease or phase change polymer has been experimental in the past. A semi-analytical model, which captures the various parameters affecting the contact resistance of two class of materials; the phase change and the thermal grease is also developed in this paper. This model fits very well with the experimental data.

Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function

2021 ◽  
pp. 1-1
Author(s):  
Yi-Fan Chen ◽  
Lee-Wen Hsu ◽  
Chia-Wei Hu ◽  
Guan-Ting Lai ◽  
Yung-Hsien Wu
Keyword(s):  
Work Function ◽  
Tunnel Junctions ◽  
Resistance Ratio ◽  
Metal Work Function ◽  
Metal Work
Sign in / Sign up

Export Citation Format

Share Document