Size and Quality Enhancement of 2D Semiconducting Metal–Organic Chalcogenolates by Amine Addition

Author(s):  
Watcharaphol Paritmongkol ◽  
Tomoaki Sakurada ◽  
Woo Seok Lee ◽  
Ruomeng Wan ◽  
Peter Müller ◽  
...  
2021 ◽  
Vol 1192 (1) ◽  
pp. 012024
Author(s):  
K.C. Chong ◽  
S.S. Lee ◽  
S.O. Lai ◽  
H.S. Thiam ◽  
P.S. Ho ◽  
...  

Abstract Air pollution has become a severe environmental issue among millions of people around the globe. However, the risk of exposure to indoor air pollution is much higher than outdoor air pollution. The most effective way to improve indoor air quality (IAQ) by reducing the indoor CO2 content is by capturing and storing. There are several types of adsorbents used to capture CO2, namely physical adsorbents and chemical adsorbents. Metal-Organic Framework (MOF) is one of the recent interests arising physical adsorbents which possesses high adsorption capability. In this study, MOFs fabricated with different metals and organic ligands were used to evaluate their performance in CO2 adsorption under an enclosed office space. Magnesium, chromium, and copper metals were used as the main element in the MOF fabrication coupled with trimesic acid as an organic ligand. The MOFs’ morphologies generally illustrated that magnesium MOF exhibited a dispersed nanorod flask crystal, chromium MOF showed agglomeration crystal, whereas fine crystal rod was observed in copper MOF. The elemental analysis from EDX and XRD confirmed that the metals were successfully embedded with the organic ligand, which is similar to the literature studies. The CO2 gas adsorption study suggested that magnesium MOF fabricated with trimesic acid possess superior CO2 adsorption capability as the recorded CO2 concentration reduced from 960 ± 73 ppm to 895 ± 57 under 2 hours continuous sampling time. The CO2 adsorption study reveals that the magnesium MOF with trimesic acid ligand yields a promising result on indoor CO2 concentration reduction. This result suggested that the MOF possesses a great potential to be applied in the indoor air quality enhancement with the integration to the existing air purification and/or filtration system.


Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).


Author(s):  
J.L. Batstone

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).


2021 ◽  
Author(s):  
Lars Öhrström ◽  
Francoise M. Amombo Noa

2020 ◽  
Vol 7 (1) ◽  
pp. 221-231
Author(s):  
Seong Won Hong ◽  
Ju Won Paik ◽  
Dongju Seo ◽  
Jae-Min Oh ◽  
Young Kyu Jeong ◽  
...  

We successfully demonstrate that the chemical bath deposition (CBD) method is a versatile method for synthesizing phase-pure and uniform MOFs by controlling their nucleation stages and pore structures.


2021 ◽  
Author(s):  
Jintong Liu ◽  
Jing Huang ◽  
Lei Zhang ◽  
Jianping Lei

We review the general principle of the design and functional modulation of nanoscaled MOF heterostructures, and biomedical applications in enhanced therapy.


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