scholarly journals AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport

ACS Nano ◽  
2012 ◽  
Vol 6 (2) ◽  
pp. 1142-1148 ◽  
Author(s):  
Carlos Diaz-Pinto ◽  
Debtanu De ◽  
Viktor G. Hadjiev ◽  
Haibing Peng
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carrier Transport ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Hot Carrier

scholarly journals Flexibility of Fluorinated Graphene-Based Materials

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1032 ◽  
Author(s):  
Irina Antonova ◽  
Nadezhda Nebogatikova ◽  
Nabila Zerrouki ◽  
Irina Kurkina ◽  
Artem Ivanov
Keyword(s):  
Chemical Vapor Deposition ◽  
Polyvinyl Alcohol ◽  
Vapor Deposition ◽  
Tensile Strain ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Current Ratio ◽  
Bending Radius ◽  
Fluorinated Graphene

The resistivity of different films and structures containing fluorinated graphene (FG) flakes and chemical vapor deposition (CVD)-grown graphene of various fluorination degrees under tensile and compressive strains due to bending deformations was studied. Graphene and multilayer graphene films grown by means of the chemical vapor deposition (CVD) method were transferred onto the flexible substrate by laminating and were subjected to fluorination. They demonstrated a weak fluorination degree (F/C lower 20%). Compressive strains led to a strong (one-two orders of magnitude) decrease in the resistivity in both cases, which was most likely connected with the formation of additional conductive paths through fluorinated graphene. Tensile strain up to 3% caused by the bending of both types of CVD-grown FG led to a constant value of the resistivity or to an irreversible increase in the resistivity under repeated strain cycles. FG films created from the suspension of the fluorinated graphene with a fluorination degree of 20–25%, after the exclusion of design details of the used structures, demonstrated a stable resistivity at least up to 2–3% of tensile and compressive strain. The scale of resistance changes ΔR/R0 was found to be in the range of 14–28% with a different sign at the 10% tensile strain (bending radius 1 mm). In the case of the structures with the FG thin film printed on polyvinyl alcohol, a stable bipolar resistive switching was observed up to 6.5% of the tensile strain (bending radius was 2 mm). A further increase in strain (6.5–8%) leads to a decrease in ON/OFF current ratio from 5 down to 2 orders of magnitude. The current ratio decrease is connected with an increase under the tensile strain in distances between conductive agents (graphene islands and traps at the interface with polyvinyl alcohol) and thickness of fluorinated barriers within the active layer. The excellent performance of the crossbar memristor structures under tensile strain shows that the FG films and structures created from suspension are especially promising for flexible electronics.

Insights into graphene wettability transparency by locally probing its surface free energy

Nanoscale ◽  
2019 ◽  
Vol 11 (16) ◽  
pp. 7944-7951 ◽  
Author(s):  
Jin-You Lu ◽  
Tuza Olukan ◽  
Srinivasa Reddy Tamalampudi ◽  
Abdulrahman Al-Hagri ◽  
Chia-Yun Lai ◽  
...  
Keyword(s):  
Free Energy ◽  
Chemical Vapor Deposition ◽  
Surface Energy ◽  
Surface Free Energy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Natural Graphite

In this work, we study the surface energy of monolayer, bilayer and multilayer graphene coatings, produced through exfoliation of natural graphite flakes and chemical vapor deposition.

scholarly journals Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

Electronics ◽  
2013 ◽  
Vol 2 (4) ◽  
pp. 315-331 ◽  
Author(s):  
Srikrishna Bodepudi ◽  
Abhay Singh ◽  
Sandipan Pramanik
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Current Perpendicular To Plane

Thermal stability of multilayer graphene films synthesized by chemical vapor deposition and stained by metallic impurities

2012 ◽  
Vol 23 (7) ◽  
pp. 075702 ◽  
Author(s):  
Yung Ho Kahng ◽  
Sangchul Lee ◽  
Woojin Park ◽  
Gunho Jo ◽  
Minhyeok Choe ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Graphene Films ◽  
Metallic Impurities ◽  
Thermal Stability Of

Detailed analysis of carrier transport in InAs0.3Sb0.7layers grown on GaAs substrates by metalorganic chemical‐vapor deposition

1994 ◽  
Vol 76 (10) ◽  
pp. 5820-5828 ◽  
Author(s):  
C. Besikci ◽  
Y. H. Choi ◽  
G. Labeyrie ◽  
E. Bigan ◽  
M. Razeghi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Detailed Analysis ◽  
Vapor Deposition ◽  
Carrier Transport ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gaas Substrates ◽  
Metalorganic Chemical

Multilayer-graphene-stabilized lithium deposition for anode-Free lithium-metal batteries

Nanoscale ◽  
2019 ◽  
Vol 11 (6) ◽  
pp. 2710-2720 ◽  
Author(s):  
Addisu Alemayehu Assegie ◽  
Cheng-Chu Chung ◽  
Meng-Che Tsai ◽  
Wei-Nien Su ◽  
Chun-Wei Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Lithium Metal ◽  
Lithium Metal Batteries ◽  
Lithium Deposition

Ultra-thin multilayer graphene film domain grown on Cu by chemical vapor deposition enables dendrite free lithium deposition in an anode-free Li metal battery via distributing localized current.

Identifying the stacking order of multilayer graphene grown by chemical vapor deposition via Raman spectroscopy

2017 ◽  
Vol 49 (1) ◽  
pp. 46-53 ◽  
Author(s):  
Miao-Ling Lin ◽  
Tao Chen ◽  
Wei Lu ◽  
Qing-Hai Tan ◽  
Pei Zhao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Stacking Order
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