Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 6655-6662 ◽  
Author(s):  
Gi Woong Shim ◽  
Kwonjae Yoo ◽  
Seung-Bum Seo ◽  
Jongwoo Shin ◽  
Dae Yool Jung ◽  
...  
2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Debora Pierucci ◽  
Hugo Henck ◽  
Carl H. Naylor ◽  
Haikel Sediri ◽  
Emmanuel Lhuillier ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (40) ◽  
pp. 24127-24133 ◽  
Author(s):  
Pham T. Huong ◽  
M. Idrees ◽  
B. Amin ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  

In this work, we systematically studied the electronic structure and optical characteristics of van der Waals (vdW) heterostructure composed of a single layer of GaN and GeC using first principles calculations.


2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Yanhao Wang ◽  
Jinbo Pang ◽  
Qilin Cheng ◽  
Lin Han ◽  
Yufen Li ◽  
...  

AbstractThe rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.


2021 ◽  
Vol 8 (3) ◽  
pp. 031410
Author(s):  
D. Kaiser ◽  
Z. Tang ◽  
M. Küllmer ◽  
C. Neumann ◽  
A. Winter ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jonathan Bradford ◽  
Mahnaz Shafiei ◽  
Jennifer MacLeod ◽  
Nunzio Motta

Abstract Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS2 was grown on epitaxial graphene on SiC by sulfurization of WO3−x thin films deposited directly onto the substrate. Using this method, WS2 growth was achieved at temperatures as low as 700 °C – significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth.


2014 ◽  
Vol 111 (17) ◽  
pp. 6198-6202 ◽  
Author(s):  
H. Fang ◽  
C. Battaglia ◽  
C. Carraro ◽  
S. Nemsak ◽  
B. Ozdol ◽  
...  

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Yue Luo ◽  
Rebecca Engelke ◽  
Marios Mattheakis ◽  
Michele Tamagnone ◽  
Stephen Carr ◽  
...  

ACS Photonics ◽  
2021 ◽  
Author(s):  
Hyemin Bae ◽  
Suk Hyun Kim ◽  
Seungmin Lee ◽  
Minji Noh ◽  
Ouri Karni ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 956
Author(s):  
Philipp Taus ◽  
Adrian Prinz ◽  
Heinz D. Wanzenboeck ◽  
Patrick Schuller ◽  
Anton Tsenov ◽  
...  

Biomimetic structures such as structural colors demand a fabrication technology of complex three-dimensional nanostructures on large areas. Nanoimprint lithography (NIL) is capable of large area replication of three-dimensional structures, but the master stamp fabrication is often a bottleneck. We have demonstrated different approaches allowing for the generation of sophisticated undercut T-shaped masters for NIL replication. With a layer-stack of phase transition material (PTM) on poly-Si, we have demonstrated the successful fabrication of a single layer undercut T-shaped structure. With a multilayer-stack of silicon oxide on silicon, we have shown the successful fabrication of a multilayer undercut T-shaped structures. For patterning optical lithography, electron beam lithography and nanoimprint lithography have been compared and have yielded structures from 10 µm down to 300 nm. The multilayer undercut T-shaped structures closely resemble the geometry of the surface of a Morpho butterfly, and may be used in future to replicate structural colors on artificial surfaces.


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