scholarly journals Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jonathan Bradford ◽  
Mahnaz Shafiei ◽  
Jennifer MacLeod ◽  
Nunzio Motta
Keyword(s):  
Vapor Deposition ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Van Der Waals Heterostructures ◽  
Metal Dichalcogenides ◽  
Direct Growth ◽  
Cvd Growth

Abstract Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS2 was grown on epitaxial graphene on SiC by sulfurization of WO3−x thin films deposited directly onto the substrate. Using this method, WS2 growth was achieved at temperatures as low as 700 °C – significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

ACS Nano ◽  
2017 ◽  
Vol 11 (4) ◽  
pp. 4328-4336 ◽  
Author(s):  
Zhepeng Zhang ◽  
Xujing Ji ◽  
Jianping Shi ◽  
Xiebo Zhou ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Van Der Waals Heterostructures ◽  
Chemical Vapor Deposition Growth

Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Anh Tuan Hoang ◽  
Kairui Qu ◽  
Xiang Chen ◽  
Jong-Hyun Ahn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Wafer Scale ◽  
Metal Dichalcogenides ◽  
Device Applications

This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition and solution-based methods and various device applications.

Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 336-341 ◽  
Author(s):  
Kehao Zhang ◽  
Bhakti Jariwala ◽  
Jun Li ◽  
Natalie C. Briggs ◽  
Baoming Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Vapor Deposition ◽  
Large Scale ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Large Area ◽  
Metal Dichalcogenides ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Large area 2D MoS2 and WSe2 are integrated on 3D GaN by metal organic chemical vapor deposition (MOCVD). The thickness-dependent vertical tunneling and interlayer charge transfer is carefully studied. This work shows that few layer WSe2 film is the appropriate choice towards device application of synthetic 2D/3D heterostructures.

scholarly journals Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures

2020 ◽  
Vol 6 (39) ◽  
pp. eaba8866 ◽  
Author(s):  
Junho Choi ◽  
Wei-Ting Hsu ◽  
Li-Syuan Lu ◽  
Liuyang Sun ◽  
Hui-Yu Cheng ◽  
...  
Keyword(s):  
Energy Transport ◽  
Twist Angle ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Van Der Waals Heterostructures ◽  
Exciton Diffusion ◽  
Rich Variety ◽  
Metal Dichalcogenides ◽  
The Rich

The properties of van der Waals heterostructures are drastically altered by a tunable moiré superlattice arising from periodically varying atomic alignment between the layers. Exciton diffusion represents an important channel of energy transport in transition metal dichalcogenides (TMDs). While early studies performed on TMD heterobilayers suggested that carriers and excitons exhibit long diffusion, a rich variety of scenarios can exist. In a moiré crystal with a large supercell and deep potential, interlayer excitons may be completely localized. As the moiré period reduces at a larger twist angle, excitons can tunnel between supercells and diffuse over a longer lifetime. The diffusion should be the longest in commensurate heterostructures where the moiré superlattice is completely absent. Here, we experimentally demonstrate the rich phenomena of interlayer exciton diffusion in WSe2/MoSe2 heterostructures by comparing several samples prepared with chemical vapor deposition and mechanical stacking with accurately controlled twist angles.

scholarly journals Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Yanhao Wang ◽  
Jinbo Pang ◽  
Qilin Cheng ◽  
Lin Han ◽  
Yufen Li ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Rapid Development ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Infrared Image ◽  
Chemical Vapor ◽  
Research Progress ◽  
Large Area ◽  
Van Der Waals Heterostructures ◽  
Material Community

AbstractThe rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.

Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies

Nanoscale ◽  
2016 ◽  
Vol 8 (5) ◽  
pp. 3008-3018 ◽  
Author(s):  
Amit S. Pawbake ◽  
Mahendra S. Pawar ◽  
Sandesh R. Jadkar ◽  
Dattatray J. Late
Keyword(s):  
Raman Spectroscopy ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Lateral Size ◽  
Large Area ◽  
Temperature Dependent ◽  
Chemical Vapor Deposited ◽  
Metal Dichalcogenides ◽  
Spectroscopy Studies

We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 μm in lateral size.

scholarly journals The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Caihong Li ◽  
Juntong Zhu ◽  
Wen Du ◽  
Yixuan Huang ◽  
Hao Xu ◽  
...  
Keyword(s):  
Communication Systems ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Optical Signals ◽  
Metal Dichalcogenides ◽  
One Step ◽  
The One ◽  
Charge Carrier Trapping ◽  
Sharp Interfaces

AbstractMonolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

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