scholarly journals High quality-factor optical nanocavities in bulk single-crystal diamond

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Michael J. Burek ◽  
Yiwen Chu ◽  
Madelaine S. Z. Liddy ◽  
Parth Patel ◽  
Jake Rochman ◽  
...  

2012 ◽  
Vol 101 (16) ◽  
pp. 163505 ◽  
Author(s):  
P. Ovartchaiyapong ◽  
L. M. A. Pascal ◽  
B. A. Myers ◽  
P. Lauria ◽  
A. C. Bleszynski Jayich


2006 ◽  
Vol 956 ◽  
Author(s):  
William Joseph Yost

ABSTRACTThe desire to exploit the extreme properties which differentiate diamond from other, more mature wide bandgap technologies has recently been given further impetus by the development of high quality single crystal CVD diamond material [1].To realise the significant potential of diamond devices over existing device technology depends on completing a number of key objectives, in particular providing:(a). access in volume to high quality, ultra-high purity, single crystal material,(b). the capability to provide carriers by doping the material in a controlled manner,(c). the ability to process thin layers and structures.Providing access to bulk single crystal diamond (albeit not electronic grade material) has already been largely achieved and plates are commercially available for cutting applications [2]. Routes to providing suitable charge carriers are being widely investigated. Although intrinsic diamond can have exceptional electronic properties [1], in reports of both p-type and n-type diamond [3,4] the dopants are very deep (0.37 eV and 0.6 eV for boron and phosphorous respectively), which limits the realisation of conventional electronic devices operating at ambient temperatures.A series of novel devices undergone preliminary experimental evaluation. Devices made up of boron and intrinsic layers, where the boron concentration exceeds the limit of metallic conduction (>1×1020 cm−3), offer carrier diffusion at room temperature from the highly doped regions with low mobility, into adjacent regions of intrinsic material with high carrier mobility [5]. To provide the required device performance, the interface between the doped and intrinsic layers needs to be defect free and to change doping levels by several orders of magnitude in a few atomic layers.Although progress over the last few years has been rapid, there remain substantial technical challenges ahead for the realisation of large scale diamond active electronics. This paper will identify and review progress against these key issues.



2020 ◽  
Vol 13 (5) ◽  
pp. 052007 ◽  
Author(s):  
Anna Suzuki ◽  
Christian Kränkel ◽  
Masaki Tokurakawa




2014 ◽  
Vol 134 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Nguyen Van Toan ◽  
Masaya Toda ◽  
Yusuke Kawai ◽  
Takahito Ono


2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Andreas Ø. Svela ◽  
Jonathan M. Silver ◽  
Leonardo Del Bino ◽  
Shuangyou Zhang ◽  
Michael T. M. Woodley ◽  
...  

AbstractAs light propagates along a waveguide, a fraction of the field can be reflected by Rayleigh scatterers. In high-quality-factor whispering-gallery-mode microresonators, this intrinsic backscattering is primarily caused by either surface or bulk material imperfections. For several types of microresonator-based experiments and applications, minimal backscattering in the cavity is of critical importance, and thus, the ability to suppress backscattering is essential. We demonstrate that the introduction of an additional scatterer into the near field of a high-quality-factor microresonator can coherently suppress the amount of backscattering in the microresonator by more than 30 dB. The method relies on controlling the scatterer position such that the intrinsic and scatterer-induced backpropagating fields destructively interfere. This technique is useful in microresonator applications where backscattering is currently limiting the performance of devices, such as ring-laser gyroscopes and dual frequency combs, which both suffer from injection locking. Moreover, these findings are of interest for integrated photonic circuits in which back reflections could negatively impact the stability of laser sources or other components.



2019 ◽  
Vol 216 (21) ◽  
pp. 1900227
Author(s):  
Wenxi Fei ◽  
Masafumi Inaba ◽  
Haruka Hoshino ◽  
Ikuto Tsuyusaki ◽  
Sora Kawai ◽  
...  


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