scholarly journals Hybrid gold/DNA nanowire circuit with sub-10 nm nanostructure arrays

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Jong Seob Choi ◽  
Hye Bin Park ◽  
Jonathan H. Tsui ◽  
Byungyou Hong ◽  
Deok-Ho Kim ◽  
...  

Abstract We report on a simple and efficient method for the selective positioning of Au/DNA hybrid nanocircuits using a sequential combination of electron-beam lithography (EBL), plasma ashing, and a molecular patterning process. The nanostructures produced by the EBL and ashing process could be uniformly formed over a 12.6 in2 substrate with sub-10 nm patterning with good pattern fidelity. In addition, DNA molecules were immobilized on the selectively nanopatterned regions by alternating surface coating procedures of 3-(aminopropyl)triethoxysilane (APS) and diamond like carbon (DLC), followed by deposition of DNA molecules into a well-defined single DNA nanowire. These single DNA nanowires were used not only for fabricating Au/DNA hybrid nanowires by the conjugation of Au nanoparticles with DNA, but also for the formation of Au/DNA hybrid nanocircuits. These nanocircuits prepared from Au/DNA hybrid nanowires demonstrate conductivities of up to 4.3 × 105 S/m in stable electrical performance. This selective and precise positioning method capable of controlling the size of nanostructures may find application in making sub-10 nm DNA wires and metal/DNA hybrid nanocircuits.

2012 ◽  
Vol 3 ◽  
pp. 773-777 ◽  
Author(s):  
Fabian Enderle ◽  
Oliver Dubbers ◽  
Alfred Plettl ◽  
Paul Ziemann

For many applications it is desirable to have nanoparticles positioned on top of a given substrate well separated from each other and arranged in arrays of a certain geometry. For this purpose, a method is introduced combining the bottom-up self-organization of precursor-loaded micelles providing Au nanoparticles (NPs), with top-down electron-beam lithography. As an example, 13 nm Au NPs are arranged in a square array with interparticle distances >1 µm on top of Si substrates. By using these NPs as masks for a subsequent reactive ion etching, the square pattern is transferred into Si as a corresponding array of nanopillars.


Author(s):  
S.D. Berger ◽  
J.M. Gibson ◽  
R.M. Camarda ◽  
R.C. Farrow ◽  
H.A. Huggins ◽  
...  

2010 ◽  
Vol 1248 ◽  
Author(s):  
Urcan Guler ◽  
Rasit Turan

AbstractLocalized Surface Plasmon Resonances (LSPR) in rod-shaped Gold (Au) nanoparticles patterned with Electron Beam Lithography (EBL) technique are observed via reflectance measurements. Resonance peaks corresponding to the principal axes of the nano-rods are shown to be affected by each other. Excitation of one of the peaks is found to result in a decrease in the peak intensity of the resonance through the other axis. Arrays of Au nanoparticles with constant width and thickness but increasing length are examined for further understanding of the effect. As the particle length increased from 70 nm to 300 nm, resonance peak wavelength shifted from 650 nm to 1200 nm. Total reflectance intensities of samples with varying principal axis dimensions obtained through the spectral region of interest are also examined to see the relation between contributing electrons and total amount of reflected intensity. Results corresponding to both polarized and unpolarized illumination of samples are presented together to gain better understanding of lowered reflectance peak intensities obtained from the latter case. Based on the results obtained so far, nano-sized metal rods are promising tools for optically switched intensity modulation in the visible and near-IR region.


2018 ◽  
Vol 790 ◽  
pp. 28-33 ◽  
Author(s):  
Tashiro Tomoya ◽  
Hui Zhang ◽  
Kakeru Oshima ◽  
Yuya Sakurai ◽  
Takaaki Suzuki ◽  
...  

A simple fabrication process of an n-type silicon nanowire (SiNW) biosensor for sub-10 femtomolar (fM) concentration immunoglobulin detection was presented in this work. The SiNWs with different widths of 80-190 nm were fabricated using electron beam lithography and reaction ion etching techniques. The electrical characteristics of SiNWs with various widths were measured. And it can be observed that thin SiNW has high resistance, which is in agreement with electrical resistance theory. Furthermore, the surface of the fabricated SiNW was functionalized by 3-aminopropyltriethoxysilane for making the biosensor device to detect the binding of immunoglobulin G (IgG) molecules. The responsivity of the biosensor was investigated by observing electrical performance in response due to IgG with various concentration from 6 fM to 600 nanomolar (nM). The resistance changing ratio based on the current voltage (I-V) characteristics was analyzed and it increased with increasing of the IgG concentration. As a result, it demonstrated that the n-type SiNW biosensor has the ability to detect the IgG molecules with low concentration of 6 fM.


2005 ◽  
Vol 19 (11) ◽  
pp. 2138-2144 ◽  
Author(s):  
Jongseung Hwang ◽  
David Ahn ◽  
Suheon Hong ◽  
Hyungkwon Kim ◽  
Sungwoo Hwang

Author(s):  
L. D. Jackel

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.


Author(s):  
Henry I. Smith ◽  
D.C. Flanders

Scanning electron beam lithography has been used for a number of years to write submicrometer linewidth patterns in radiation sensitive films (resist films) on substrates. On semi-infinite substrates, electron backscattering severely limits the exposure latitude and control of cross-sectional profile for patterns having fundamental spatial frequencies below about 4000 Å(l),Recently, STEM'S have been used to write patterns with linewidths below 100 Å. To avoid the detrimental effects of electron backscattering however, the substrates had to be carbon foils about 100 Å thick (2,3). X-ray lithography using the very soft radiation in the range 10 - 50 Å avoids the problem of backscattering and thus permits one to replicate on semi-infinite substrates patterns with linewidths of the order of 1000 Å and less, and in addition provides means for controlling cross-sectional profiles. X-radiation in the range 4-10 Å on the other hand is appropriate for replicating patterns in the linewidth range above about 3000 Å, and thus is most appropriate for microelectronic applications (4 - 6).


Author(s):  
Dhruba K. Chattoraj ◽  
Ross B. Inman

Electron microscopy of replicating intermediates has been quite useful in understanding the mechanism of DNA replication in DNA molecules of bacteriophage, mitochondria and plasmids. The use of partial denaturation mapping has made the tool more powerful by providing a frame of reference by which the position of the replicating forks in bacteriophage DNA can be determined on the circular replicating molecules. This provided an easy means to find the origin and direction of replication in λ and P2 phage DNA molecules. DNA of temperate E. coli phage 186 was found to have an unique denaturation map and encouraged us to look into its mode of replication.


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