scholarly journals Super-geometric electron focusing on the hexagonal Fermi surface of PdCoO2

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Maja D. Bachmann ◽  
Aaron L. Sharpe ◽  
Arthur W. Barnard ◽  
Carsten Putzke ◽  
Markus König ◽  
...  
Keyword(s):  
Fermi Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Electron Optics ◽  
Ballistic Regime ◽  
Fermi Surfaces ◽  
Self Focusing ◽  
Electron Focusing

Abstract Geometric electron optics may be implemented in solids when electron transport is ballistic on the length scale of a device. Currently, this is realized mainly in 2D materials characterized by circular Fermi surfaces. Here we demonstrate that the nearly perfectly hexagonal Fermi surface of PdCoO2 gives rise to highly directional ballistic transport. We probe this directional ballistic regime in a single crystal of PdCoO2 by use of focused ion beam (FIB) micro-machining, defining crystalline ballistic circuits with features as small as 250 nm. The peculiar hexagonal Fermi surface naturally leads to enhanced electron self-focusing effects in a magnetic field compared to circular Fermi surfaces. This super-geometric focusing can be quantitatively predicted for arbitrary device geometry, based on the hexagonal cyclotron orbits appearing in this material. These results suggest a novel class of ballistic electronic devices exploiting the unique transport characteristics of strongly faceted Fermi surfaces.

Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

1998 ◽  
Author(s):  
J. Benbrik ◽  
G. Rolland ◽  
P. Perdu ◽  
B. Benteo ◽  
M. Casari ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Complete Characterization ◽  
Bipolar Transistors ◽  
Ion Beam Irradiation ◽  
Physical Mechanisms ◽  
Dc Characteristics ◽  
Electrical Degradation ◽  
Physical Phenomena

Abstract Focused Ion Beam is commonly used for IC repairs and modifications. However, FIB operation may also induce a damaging impact which can takes place far from the working area due to the charge-up phenomenon. A complete characterization joined to an in-depth understanding of the physical phenomena arising from FIB irradiation is therefore necessary to take into account spurious FIB induced effects and to enhance the success of FIB modifications. In this paper, we present the effects of FIB irradiation on the electrical DC performances of different electronic devices such as nMOS and pMOS transistors, CMOS inverters, PN junctions and bipolar transistors. From the observed behavior of the DC characteristics evolution of the devices, some suggestions about physical mechanisms inducing the electrical degradation are proposed.

Focused ion beam milling of exfoliated graphene for prototyping of electronic devices

2012 ◽  
Vol 98 ◽  
pp. 313-316 ◽  
Author(s):  
Marek E. Schmidt ◽  
Zaharah Johari ◽  
Razali Ismail ◽  
Hiroshi Mizuta ◽  
Harold M.H. Chong
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Exfoliated Graphene ◽  
Focused Ion Beam Milling

Electron focusing with multiparallel one‐dimensional channels made by focused ion beam

1990 ◽  
Vol 56 (4) ◽  
pp. 385-387 ◽  
Author(s):  
K. Nakamura ◽  
D. C. Tsui ◽  
F. Nihey ◽  
H. Toyoshima ◽  
T. Itoh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
One Dimensional ◽  
Electron Focusing

scholarly journals Low-symmetry nonlocal transport in microstructured squares of delafossite metals

2021 ◽  
Vol 118 (47) ◽  
pp. e2113185118
Author(s):  
Philippa H. McGuinness ◽  
Elina Zhakina ◽  
Markus König ◽  
Maja D. Bachmann ◽  
Carsten Putzke ◽  
...  
Keyword(s):  
Ballistic Transport ◽  
Mean Free Path ◽  
Two Dimensional ◽  
Hall Voltage ◽  
Ballistic Regime ◽  
Fermi Surfaces ◽  
Surface System ◽  
Transport Experiment ◽  
Nonlocal Transport ◽  
Low Symmetry

Intense work studying the ballistic regime of electron transport in two-dimensional systems based on semiconductors and graphene had been thought to have established most of the key experimental facts of the field. In recent years, however, additional forms of ballistic transport have become accessible in the quasi–two-dimensional delafossite metals, whose Fermi wavelength is a factor of 100 shorter than those typically studied in the previous work and whose Fermi surfaces are nearly hexagonal in shape and therefore strongly faceted. This has some profound consequences for results obtained from the classic ballistic transport experiment of studying bend and Hall resistances in mesoscopic squares fabricated from delafossite single crystals. We observe pronounced anisotropies in bend resistances and even a Hall voltage that is strongly asymmetric in magnetic field. Although some of our observations are nonintuitive at first sight, we show that they can be understood within a nonlocal Landauer-Büttiker analysis tailored to the symmetries of the square/hexagonal geometries of our combined device/Fermi surface system. Signatures of nonlocal transport can be resolved for squares of linear dimension of nearly 100 µm, approximately a factor of 15 larger than the bulk mean free path of the crystal from which the device was fabricated.

Advanced Laser Preparation of Microsystems for Further FIB Processing

2010 ◽  
Author(s):  
Juergen Walter ◽  
Stefan Martens ◽  
Walter Mack
Keyword(s):  
Focused Ion Beam ◽  
Laser Energy ◽  
Ion Beam ◽  
Electronic Devices ◽  
3D Integration ◽  
Laser Target ◽  
Target Preparation ◽  
Precise Prediction ◽  
In Situ Heating

Abstract The trends towards 3D integration in microsystems technology and electronic packaging require that failure-analysis methods and target-preparation procedures are adapted to these emerging packaging technologies. The feasibility of laser-target preparation in microsystems is addressed in this paper, especially 3D integrated electronic devices. Various laser technologies were evaluated and the laser of choice was demonstrated to be appropriate for use with stacked packages. In addition, the laser preparation related Heat-Affected Zones (HAZs) were studied. The laser-energy absorption was determined by in situ heating-rate measurement, which enables precise prediction of HAZ extension by the use of Finite Element (FE) simulation. The advantage of this technique for removal rates compared to conventional techniques is discussed, as well as the combination of the excellent ablation rates of pulsed-laser ablation with the high accuracy of Focused Ion Beam (FIB) milling.

Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography

2008 ◽  
Vol 19 (48) ◽  
pp. 485305 ◽  
Author(s):  
M C Wu ◽  
A Aziz ◽  
J D S Witt ◽  
M C Hickey ◽  
M Ali ◽  
...  
Keyword(s):  
Functional Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Ion Beam Lithography ◽  
Spin Electronic

scholarly journals Development of Micro-aperture for Annular Pupil on Electron Optics by Focused Ion Beam Technique

Shinku ◽  
2007 ◽  
Vol 50 (10) ◽  
pp. 639-643
Author(s):  
Makoto FUJIWARA ◽  
Takeo TANAKA ◽  
Ippei SHIMIZU ◽  
Takaomi MATSUTANI ◽  
Masaki HISAKA ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Optics ◽  
Beam Technique

Investigation on Focused Ion Beam Induced Damage on Nanoscale SRAM by Nanoprobing

2008 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
P.K. Tan ◽  
Y.W. Goh ◽  
J.L. Cai ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Random Access ◽  
Electrical Characterization ◽  
Electrical Parameters ◽  
Access Memory ◽  
Nanoscale Sram ◽  
Site Identification ◽  
The Impact

Abstract As electronic devices shrink further in the nanometer regime, electrical characterization using nanoprobing has become increasingly important. Focused ion beam (FIB) is one useful technique that can be used to create markings for ease of defective site identification during nanoprobing. This paper investigates the impact of FIB exposure on the electrical parameters of the pull-up (PU), pull-down (PD) and pass-gate (PG) transistors of 6-Transistor Static Random Access Memory (6T SRAM) cells.

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