scholarly journals Unprotected sidewalls of implantable silicon-based neural probes and conformal coating as a solution

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Pejman Ghelich ◽  
Nicholas F. Nolta ◽  
Martin Han
Keyword(s):  
Silicon Dioxide ◽  
Inductively Coupled Plasma ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Batch Process ◽  
Plasma Chemical Vapor Deposition ◽  
Conformal Coating ◽  
Silicon Based

AbstractSilicon-based implantable neural devices have great translational potential as a means to deliver various treatments for neurological disorders. However, they are currently held back by uncertain longevity following chronic exposure to body fluids. Conventional deposition techniques cover only the horizontal surfaces which contain active electronics, electrode sites, and conducting traces. As a result, a vast majority of today’s silicon devices leave their vertical sidewalls exposed without protection. In this work, we investigated two batch-process silicon dioxide deposition methods separately and in combination: atomic layer deposition and inductively-coupled plasma chemical vapor deposition. We then utilized a rapid soak test involving potassium hydroxide to evaluate the coverage quality of each protection strategy. Focused ion beam cross sectioning, scanning electron microscopy, and 3D extrapolation enabled us to characterize and quantify the effectiveness of the deposition methods. Results showed that bare silicon sidewalls suffered the most dissolution whereas ALD silicon dioxide provided the best protection, demonstrating its effectiveness as a promising batch process technique to mitigate silicon sidewall corrosion in chronic applications.

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

The Characteristics of Silicon Dioxide Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at 150°C

2003 ◽  
Vol 769 ◽  
Author(s):  
Su-hyuk Kang ◽  
Min-Cheol Lee ◽  
Kook-Chul Moon ◽  
Min-koo Han
Keyword(s):  
Silicon Dioxide ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Plasma Chemical ◽  
Silicon Dioxide Film ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Dioxide Film

AbstractAn ultra-low temperature processed silicon dioxide film has been fabricated by inductively coupled plasma chemical vapor deposition at 150°C using He/N2O/SiH4 mixture. The deposited silicon dioxide film exhibits a high breakdown field larger than 6MV/cm in case of high ICP plasma condition while the flat band voltage of the oxide film significantly shifted in the negative direction with increasing ICP power. In order to obtain both high electrical breakdown filed and the low flat-band voltage, excimer laser irradiation with the energy density of 430mJ/cm2 is employed. The oxide film irradiated by excimer laser exhibited considerably shifted in the positive direction without scarifying the breakdown characteristics.

scholarly journals Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1392 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Shih-Mao Liu ◽  
Shui-Yang Lien ◽  
Xiao-Ying Zhang ◽  
Yun-Shao Cho ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Inductively Coupled Plasma ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Silicon Wafers ◽  
Black Silicon ◽  
Al2o3 Layer ◽  
Plasma Chemical Vapor Deposition ◽  
Surface Recombination Rate

In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.

scholarly journals Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

2017 ◽  
Vol 28 (8) ◽  
pp. 085303 ◽  
Author(s):  
Zhengjun Liu ◽  
Ali Shah ◽  
Tapani Alasaarela ◽  
Nikolai Chekurov ◽  
Hele Savin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atomic Layer ◽  
Ion Beam Lithography ◽  
Layer Deposition

Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

2010 ◽  
Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li
Keyword(s):  
Failure Analysis ◽  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Detection Sensitivity ◽  
Chemical Contamination ◽  
Inductively Coupled ◽  
Minimal Sample ◽  
Icp Ms

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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