scholarly journals Exciton dynamics in monolayer graphene grown on a Cu(111) surface

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Youngsin Park ◽  
Guanhua Ying ◽  
Robert A. Taylor ◽  
Chan C. Hwang

AbstractWe have characterized the carrier dynamics of the excitonic emission emerging from a monolayer of graphene grown on a Cu(111) surface. Excitonic emission from the graphene, with strong and sharp peaks both with a full-width at half-maximum of 2.7 meV, was observed near ~3.16 and ~3.18 eV at 4.2 K. The carrier recombination parameters were studied by measuring both temperature-dependent and time-resolved photoluminescence. The intensity variation with temperature of these two peaks shows an opposing trend. The time-resolved emission was modelled using coupled differential equations and the decay time was found to be dominated by carrier trapping and Auger recombination as the temperature increased.

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.


2016 ◽  
Vol 70 (12) ◽  
pp. 1974-1980 ◽  
Author(s):  
Justin M. Reynard ◽  
Nathan S. Van Gorder ◽  
Caley A. Richardson ◽  
Richie D. Eriacho ◽  
Frank V. Bright

We report new instrumentation for rapidly and reliably measuring the temperature-dependent photoluminescence response from porous silicon as a function of analyte vapor concentration. The new system maintains the porous silicon under inert conditions and it allows on-the-fly steady-state and time-resolved photoluminescence intensity and hyper-spectral measurements between 293 K and 450 K. The new system yields reliable data at least 100-fold faster in comparison to previous instrument platforms.


Author(s):  
Pham Thi Thuy ◽  
Bui Xuan Vuong

This paper reports on the photoluminescence of porous GaPprepared by electrochemical anodization of (111)-oriented bulk material.Porous and bulk GaP exhibits green and red photoluminescence, respectively when excited by the 355-nm laser. The photoluminescence intensity of porous GaP is much stronger than that of the bulk sample. Temperature-dependent time-resolved photoluminescence shows that the green emission gradually decreases when the temperature increases and the photoluminescence full width at haft maximum (FWHM) slightly narrow with decreasing temperature. These results assigned to the contribution of lattice vibrations. Raman scattering measurement is carried out to confirm the size decreasing of the porous GaP material. Keywords PorousGaP, photoluminescence, time-resolved photoluminescence, electrochemical etching References 1. L. T. Canham, Appl. Phys.Lett. 57, 1046 (1990).2. K. Grigoras, Jpn. J. Appl. Phys. 39, 378 (2000)3. H. Koyama, J. Appl. Electrochem. 36, 999 (2006)4. H. A. Hadi, International Letters of Chemistry, Physics and Astronomy, 17(2), 142-152 (2014).5. S. Setzu, P. Ferrand, and R. Romestain, Mater.Sci. Eng, 34, 69-70 (2000).6. S. E. Letant and M. J. Sailor, Adv. Mater, 355, 12 (2000).7. M. T. Kelly, J. K. M. Chun, and A. B. Bocarsly, Nature, 382, 214 (1996).8. G. Di Francia, V. La Ferrara, L. Quercia, and G. Faglia, J. Porous Mater, 7, 287 (2000).9. J. Drott, K. Lindstrom, L. Rosengren, and T. Laurell, J. Micromech. Microeng, 7, 14 (1997).10. B. P. Azeredo, Y. W. Lin, A. Avagyan, M. Sivaguru, K. Hsu, P. Ferreira, Advanced Functional Materials, 26, 2929-2939 (2016).11. A. Anedda, A. Serpi, V. A. Karavanskii, I. M. Tiginyanu, and V. M. Ichizli, Appl. Phys.Lett, 67, 3316 (1995).12. A. I. Belogorokhov, V. A. Karavanskii, A. N. Obraztsov and V. Yu. Timoshenko, JETP Lett. 60, 274 (1994).13. K. Tomioka, S. Adachi, J. App. Phys, 98, 073511 (2005).14. M. A. Stevens-Kalceff, I. M. Tiginyanu, S. Langa, H. Foll and H. L. Hartnagel, J. App. Phys, 89,2560 (2001).15. A. V. Zoteev, P. K. Kashkarov, A. N. Obraztsov and V. Y. Timoshenko, Semiconductors, 30, 775 (1996).16. A. A. Lebedev, V. Y. Rud and Y. V. Rud, Tech. Phys. Lett, 22, 754 (1996).17. H. Richter, Z. P. Wang, and L. Ley, Solid State Commum, 39, 625 (1981).18. L. H. Campbell and P. M.Fauchet, Solid State Commum, 58, 739 (1986).19. V. V. Ursaki, N. N. Syrbu, S. Albu, V. V. Zalamai, I. M. Tiginyanu, and R. W. Boyd, Semicond. Sci. Technl, 20, 745- 748 (2005)20. R. W. Tjerkstra, Electrochemical and Solid-State Letters,9 (5), C81-C84 (2006)


1997 ◽  
Vol 486 ◽  
Author(s):  
J. Linnros ◽  
A. Galeckas ◽  
A. Pareaud ◽  
N. Lalic ◽  
V. Grivickas ◽  
...  

AbstractTime resolved photoluminescence (PL) decays have been measured for Si nanocrystals embedded in silicon dioxide. The nanocrystals were formed by Si implantation followed by thermal annealing at 800 – 1200 °C. The observed PL peaked in the wavelength range 640 – 850 nm and the PL decay exhibited a stretched exponential lineshape, characterized by a relatively large time constant. A nonlinear dose dependence of the PL yield and an observed redshifting for increasing doses and/or higher annealing temperatures is discussed in terms of a nucleation and growth mechanism for the nanocrystals. Finally, we argue that Auger recombination is effective at high excitation densities explaining a wavelength dependent saturation of the PL intensity.


2006 ◽  
Vol 958 ◽  
Author(s):  
Takashi Suemasu ◽  
Cheng Li ◽  
Tsuyoshi Sunohara ◽  
Yuta Ugajin ◽  
Ken'ichi Kobayashi ◽  
...  

ABSTRACTWe have epitaxially grown Si/β-FeSi2/Si (SFS) structures with β-FeSi2 particles or β-FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed 1.6 μm electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of β-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (τ∼10 ns) and the other with a long decay time (τ∼100 ns). The short decay time was due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a defect-related D1 line in Si.


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