scholarly journals Bending light via adiabatic optical transition in longitudinally modulated photonic lattices

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Bin Han ◽  
Lei Xu ◽  
Yiling Dou ◽  
Jingjun Xu ◽  
Guoquan Zhang
Author(s):  
Bin Han ◽  
Lei Xu ◽  
Yiling Dou ◽  
Jingjun Xu ◽  
Guoquan Zhang

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.


2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.


2001 ◽  
Vol 08 (03n04) ◽  
pp. 321-325
Author(s):  
ŞAKIR ERKOÇ ◽  
HATICE KÖKTEN

We have performed self-consistent field (SCF) calculations of the electronic structure of GaAs/Ga 1-x Al x As superlattices with parabolic potential profile within the effective mass theory. We have calculated the optical transition matrix elements involving transitions from the hole states to the electron states, and we have also computed the oscillator strength matrix elements for the transitions among the electron states.


2021 ◽  
Vol 103 (3) ◽  
Author(s):  
Ricardo Román-Ancheyta ◽  
Barış Çakmak ◽  
Roberto de J. León-Montiel ◽  
Armando Perez-Leija

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kuppusamy Senthil Kumar ◽  
Diana Serrano ◽  
Aline M. Nonat ◽  
Benoît Heinrich ◽  
Lydia Karmazin ◽  
...  

AbstractThe success of the emerging field of solid-state optical quantum information processing (QIP) critically depends on the access to resonant optical materials. Rare-earth ion (REI)-based molecular systems, whose quantum properties could be tuned taking advantage of molecular engineering strategies, are one of the systems actively pursued for the implementation of QIP schemes. Herein, we demonstrate the efficient polarization of ground-state nuclear spins—a fundamental requirement for all-optical spin initialization and addressing—in a binuclear Eu(III) complex, featuring inhomogeneously broadened 5D0 → 7F0 optical transition. At 1.4 K, long-lived spectral holes have been burnt in the transition: homogeneous linewidth (Γh) = 22 ± 1 MHz, which translates as optical coherence lifetime (T2opt) = 14.5 ± 0.7 ns, and ground-state spin population lifetime (T1spin) = 1.6 ± 0.4 s have been obtained. The results presented in this study could be a progressive step towards the realization of molecule-based coherent light-spin QIP interfaces.


2021 ◽  
Vol 3 (5) ◽  
Author(s):  
Logan G. Kiefer ◽  
Christian J. Robert ◽  
Taylor D. Sparks

AbstractElectrochromic materials and devices are enabling a variety of advanced technologies. Gel-based organic electrochromic molecules such as ethyl viologen diperchlorate are attractive options due to their simple device design and low cost processing options relative to the more expensive and complex transition metal oxide films. However, electrochromic devices are subject to extensive cycling in which failure and fatigue can eventually occur. This work presents the lifetime cycling performance of ethyl viologen diperchlorate-based electrochromic devices using two different anodic compounds, hydroquinone and ferrocene, which are cycled at different voltages, 3 V and 1.2 V, respectively. Multiple devices are cycled until failure with periodic device characterization via UV–Vis spectroscopy, electrical resistance and power measurement, and transition duration measurement. Devices with hydroquinone can transition quickly. Cycle times are $$\sim$$ ∼ 30 s in these samples, however, these samples also typically fail before 3000 cycles. On the other hand, devices using ferrocene transition more slowly (total cycle time $$\sim$$ ∼ 2 min), but have superior cycling performance with all samples surviving beyond 10,000 cycles while complying with ASTM E2141-14 standard.


Plasma ◽  
2021 ◽  
Vol 4 (1) ◽  
pp. 145-171
Author(s):  
Kristaq Gazeli ◽  
Guillaume Lombardi ◽  
Xavier Aubert ◽  
Corinne Y. Duluard ◽  
Swaminathan Prasanna ◽  
...  

Recent developments in plasma science and technology have opened new areas of research both for fundamental purposes (e.g., description of key physical phenomena involved in laboratory plasmas) and novel applications (material synthesis, microelectronics, thin film deposition, biomedicine, environment, flow control, to name a few). With the increasing availability of advanced optical diagnostics (fast framing imaging, gas flow visualization, emission/absorption spectroscopy, etc.), a better understanding of the physicochemical processes taking place in different electrical discharges has been achieved. In this direction, the implementation of fast (ns) and ultrafast (ps and fs) lasers has been essential for the precise determination of the electron density and temperature, the axial and radial gradients of electric fields, the gas temperature, and the absolute density of ground-state reactive atoms and molecules in non-equilibrium plasmas. For those species, the use of laser-based spectroscopy has led to their in situ quantification with high temporal and spatial resolution, with excellent sensitivity. The present review is dedicated to the advances of two-photon absorption laser induced fluorescence (TALIF) techniques for the measurement of reactive species densities (particularly atoms such as N, H and O) in a wide range of pressures in plasmas and flames. The requirements for the appropriate implementation of TALIF techniques as well as their fundamental principles are presented based on representative published works. The limitations on the density determination imposed by different factors are also discussed. These may refer to the increasing pressure of the probed medium (leading to a significant collisional quenching of excited states), and other issues originating in the high instantaneous power density of the lasers used (such as photodissociation, amplified stimulated emission, and photoionization, resulting to the saturation of the optical transition of interest).


1999 ◽  
Vol 560 ◽  
Author(s):  
Zhixun Ma ◽  
Xianbi Xiang ◽  
Shuran Sheng ◽  
Xianbo Liao ◽  
Chunlin Shao ◽  
...  

ABSTRACTThe effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170°C annealed films. The dependence of optical coefficients (μ) on photon energy (hv) near the absorption edge (Eg) is found to follow the square root law: (μhv)½ μ (Eg – hv), indicating that nano-Si embedded in Si02 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.


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