Depth profiling of a Co-implanted silicon wafer by total-reflection X-ray fluorescence analysis after repeated oxidation and HF-etching

1999 ◽  
Vol 36 (2) ◽  
pp. 27-29 ◽  
Author(s):  
R. Klockenkämper ◽  
A. von Bohlen
2004 ◽  
Vol 59 (8) ◽  
pp. 1277-1282 ◽  
Author(s):  
Yoshihiro Mori ◽  
Kenichi Uemura ◽  
Hiroshi Kohno ◽  
Motoyuki Yamagami ◽  
Takashi Yamada ◽  
...  

1988 ◽  
Vol 32 ◽  
pp. 105-114 ◽  
Author(s):  
H. Schwenke ◽  
W. Berneike ◽  
J. Knoth ◽  
U. Weisbrod

AbstractThe total reflection of X-rays is mainly determined by three parameters , that is the orltical angle, the reflectivity and the penetration depth. For X-ray fluorescence analysis the respective characteristic features can be exploited in two rather different fields of application. In the analysis of trace elements in samples placed as thin films on optical flats, detection limits as low as 2 pg or 0.05 ppb, respectively, have been obtained. In addition, a penetration depth in the nanometer regime renders Total Reflection XRF an inherently sensitive method for the elemental analysis of surfaces. This paper outlines the main physical and constructional parameters for instrumental design and quantitation in both branches of TXRF.


2004 ◽  
Vol 76 (15) ◽  
pp. 4315-4319 ◽  
Author(s):  
Pavlos E. Koulouridakis ◽  
Nikolaos G. Kallithrakas-Kontos

1999 ◽  
Vol 131 (3-4) ◽  
pp. 219-223 ◽  
Author(s):  
Juha K. Vilhunen ◽  
Alex von Bohlen ◽  
Martina Schmeling ◽  
Leena Rantanen ◽  
Seppo Mikkonen ◽  
...  

1993 ◽  
Vol 32 (Part 1, No. 3A) ◽  
pp. 1191-1196 ◽  
Author(s):  
Kenji Yakushiji ◽  
Shinji Ohkawa ◽  
Atsushi Yoshinaga ◽  
Jimpei Harada

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